Nec Corporation

Renesas Electronics Corporation

Nec Electronics Corporation

Shinji Fujieda

Akio Toda

Toru Tatsumi

Ryota Yuge

Kohji Kanamori

Hirohito Watanabe

Junichi Suzuki

Noriaki Kodama

Masayuki Terai

Teiichirou Nishizaka

Kimiyoshi Fukatsu

Yasuhide Den

Heiji Watanabe

Yoshinao Miura

Youichiro Numasawa

The present invention relates to a negative electrode material for secondary batteries, comprising graphite; wherein

Negative electrode material for secondary battery, and secondary battery

A channel is formed at a recessed portion or a projecting portion of a substrate, and a gate insulating film is formed so as to have first to third insulating regions along the channel. Each of the gate insulating films of the first and third insulating regions has a first gate insulating film containing no electric charge trap formed on a plane different from a principal surface of the substrate, an electric charge accumulating film containing an electric charge trap, and a second gate insulating film containing no electric charge trap. The gate insulating film of the second insulating region at the middle is formed on a plane parallel to the principal surface of the substrate and is composed of only a third gate insulating film containing no electric charge trap.

Semiconductor device, and its manufacturing method

The task of the present invention is to enable formation of a gate insulating film structure having a good-quality interface between a silicon oxide film and silicon in an interface between a high dielectric constant thin film and a silicon substrate to provide a semiconductor device and a semiconductor manufacturing method which are capable of improving interface electrical characteristics, which has been a longstanding task in practical use of a high dielectric constant insulating film. A metal layer deposition process and a heat treatment process which supply metal elements constituting a high dielectric constant film on a surface of a base silicon oxide filmallow the metal elements to be diffused into the base silicon oxide filmto thereby form an insulating film structureas a gate insulating film, after forming the base silicon oxide filmon a surface of a silicon substrate. The insulating film structureincluding a silicate region comprises a silicon oxide film region, a silicate region, and a metal rich region, forming a silicate structure having composition modulation in which composition of metal increases as closer to an upper portion, and the composition of silicon increases as closer to a lower portion.

Semiconductor device, production method and production device thereof

A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.

Nonvolatile memory and nonvolatile memory manufacturing method

A field effect transistor available for 1 giga-bit dynamic random access memory device has a two-layer gate structure consisting of a lower layer of nitrogen-containing silicon and an upper layer of refractory metal, and the nitrogen-containing silicon effectively prevents the gate oxide layer from alkaline metals diffused from the refractory metal.

Process of fabricating a semiconductor device having nitrogen-containing

Growing community of inventors

Tokyo, Japan

Shinji Fujieda