Renesas Electronics Corporation

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Mitsubishi Electric Corporation

Mitsubushi Denki Kabushiki Kaisha

Shinji Baba

Kozo Harada

Eiji Hayashi

Kyo Go

Kazuyuki Nakagawa

Toshihiro Iwasaki

Masaki Watanabe

Fumito Uemura

Tomokazu Umezaki

Masatoshi Yasunaga

Hironori Matsushima

Shin Nakao

Mitsuyasu Matsuo

Jun Shibata

Takeumi Kato

Muneharu Tokunaga

Yoshiaki Sato

Tetsuya Ueda

Yoshihiro Tomita

Keita Tsuchiya

Yoshihide Masumoto

Yoshikazu Shimote

Hiroyuki Uchida

Nobuhiro Kihara

Hiroshi Koizumi

Kentaro Mori

Satoshi Yamada

Shuuichi Kariyazaki

Yoshihiro Ono

Tsuyoshi Kida

Mitsuharu Hashiba

Nobuhiro Kinoshita

Michitaka Kimura

Kenji Sakata

Hirohisa Yokota

Masao Kobayashi

Yuji Kayashima

Jumpei Konno

Yomiyuki Yama

Katsushi Terajima

Takashi Karashima

Takanori Okita

Shingo Akamatsu

A semiconductor device includes a wiring substrate provided with a plurality of pads electrically connected to a semiconductor chip in a flip-chip interconnection. The wiring substrate includes a pad forming layer in which a signal pad configured to receive transmission of a first signal and a second pad configured to receive transmission of a second signal different from the first signal are formed and a first wiring layer located at a position closest to the pad forming layer. In the wiring layer, a via land overlapping with the signal pad, a wiring connected to the via land, and a wiring connected to the second pad and extending in an X direction are formed. In a Y direction intersecting the X direction, a width of the via land is larger than a width of the wiring. A wiring is adjacent to the via land and overlaps with the signal pad.

Semiconductor device including semiconductor chip transmitting signals at high speed

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a wiring substrate including a first surface and a second surface opposite to the first surface, a semiconductor chip including a plurality of chip electrodes and mounted over the wiring substrate, a first capacitor arranged at a position overlapping with the semiconductor chip in plan view and incorporated in the wiring substrate, and a second capacitor arranged between the first capacitor and a peripheral portion of the wiring substrate in plan view. Also, the second capacitor is inserted in series connection into a signal transmission path through which an electric signal is input to or output from the semiconductor chip.

Semiconductor device

According to an embodiment of the present invention, there is provided a semiconductor device having a first semiconductor component and a second semiconductor component which are mounted on a wiring substrate. The first semiconductor component has a first terminal for transmitting a first signal between the first semiconductor component and the outside and a second terminal for transmitting a second signal between the first semiconductor component and the second semiconductor component. In addition, the second semiconductor component has a third terminal for transmitting the second signal between the second semiconductor component and the first semiconductor component. Further, the first signal is transmitted at a higher frequency than the second signal. Furthermore, the second terminal of the first semiconductor component and the third terminal of the second semiconductor component are electrically connected to each other via the first wiring member. In addition, the first terminal of the first semiconductor component is electrically connected to the wiring substrate via a first bump electrode without the first wiring member interposed therebetween.

A semiconductor device includes a wiring substrate including wiring layers, a semiconductor chip including electrode pads and mounted on the wiring substrate, and a first capacitor including a first electrode and a second electrode, and mounted on the wiring substrate. The wiring layers include a first wiring layer including a first terminal pad electrically connected with the first electrode of the first capacitor and a second terminal pad electrically connected with the second electrode of the first capacitor; and a second wiring layer on an inner side by one layer from the first wiring layer of the wiring substrate and including a first conductor pattern having a larger area than each of the first terminal pad and the second terminal pad. The first conductor pattern includes a first opening in a region overlapping with each of the first terminal pad and the second terminal pad in the second wiring layer.

Semiconductor device and method for manufacturing the same

This invention provides a multi-pin semiconductor device as a low-cost flip-chip BGA. In the flip-chip BGA, a plurality of signal bonding electrodes in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through holes coupled to a plurality of signal wirings drawn inside are located between a plurality of rows of signal bonding electrodes and a central region where a plurality of bonding electrodes for core power supply are located so that the chip pad pitch can be decreased and the cost of the BGA can be reduced without an increase in the number of layers in the multilayer wiring substrate.

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, fluxis applied to the solder bumpsfor flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumpsand make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

Semiconductor device and manufacturing method therefor

In a semiconductor device (SP) according to an embodiment, a solder resist film (first insulating layer, SR) which is in contact with the base material layer, and a resin body (second insulating layer,) which is in contact with the solder resist film and the semiconductor chip, are laminated in between the base material layer (CR) of a wiring substrateand a semiconductor chip (). In addition, a linear expansion coefficient of the solder resist film is equal to or larger than a linear expansion coefficient of the base material layer, and the linear expansion coefficient of the solder resist film is equal to or smaller than a linear expansion coefficient of the resin body. Also, the linear expansion coefficient of the base material layer is smaller than the linear expansion coefficient of the resin body. According to the above-described configuration, damage of the semiconductor device caused by a temperature cyclic load can be suppressed, and thereby reliability can be improved.

Semiconductor device and manufacturing method thereof

There is provided an alternating current generator for a vehicle, including: a rotor (), a flywheel (), and main magnets () and auxiliary magnets () alternately arranged; and a stator (). Each of the main magnets () is magnetized to an N-pole and an S-pole in a radial direction, whereas the main magnets () are arranged so that the main magnets () adjacent to each other through corresponding one of the auxiliary magnets () therebetween are magnetized to have opposite polarity patterns. Each of the auxiliary magnets () is magnetized to the N-pole and the S-pole in the circumferential direction, whereas the auxiliary magnets () are arranged so that the auxiliary magnets () adjacent to each other through corresponding one of the main magnets () therebetween are magnetized to have opposite polarity patterns.

Magnet-type rotating electric machine

A method of manufacturing a stator of an electric rotating machine is provided. The stator includes a plurality of teeth radially extended from a yoke portion formed by stacking steel sheets, a stator core having an insulating film on a surface of the teeth, and a winding portion including a plurality of layers of a power generating coil wound around each of the plurality of teeth. The method includes: a step of forming an insulating coating film by impregnating the power generating coil in a lower layer portion of the winding portion with a varnish using a liquid-type thermosetting resin, thereafter covering the power generating coil in a surface portion of the winding portion with a thermally meltable powder resin, and melt-bonding and thereafter curing the powder resin; and a step of curing the varnish that is performed simultaneously with the step of forming an insulating coating film.

Method of manufacturing stator of electric rotating machine

Growing community of inventors

Tokyo, Japan

Shinji Baba