Mitsubishi Electric Corporation

Nec Corporation

Mitsui Chemicals, Inc.

Nippon Chemical Industrial Co., Ltd.

Nippon Soda Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Shin-etsu Chemical Co., Ltd.

Oki Electric Industry Co., Ltd.

Mitsui Petrochemical Industries, Ltd.

Shinji Abe

Satoru Ohtani

Kazushige Kawasaki

Hiroto Nishida

Takafumi Oka

Hitoshi Sakuma

Masatsugu Kusunoki

Tomohiro Arase

Tetsuo Yoshimoto

Shotaro Matsuda

Shinji Ueno

Toshio Shiobara

Kimio Shigihara

Atsushi Ochi

Kazuaki Utsumi

Hitoshi Nakamura

Toru Mori

Katsuomi Shiozawa

Osamu Yoshida

Hiroshi Suzuki

Harumi Nishiguchi

Kyozo Kanamoto

Yoshihiro Kokubo

Shigemichi Fukayama

Michiharu Sakata

Risako Uchida

Akihito Ono

Yukimasa Shigemura

Tsutomu Shigeta

Masaaki Oyamada

Mari Tokutake

Shoji Tan

Shigeo Kobayashi

Haruo Saito

Hiroshi Nara

Kiyoharu Yamamoto

Nobutaka Aimono

Nubuo Kimura

Souichiro Sugano

Junichi Narita

Provided is a cured or uncured electromagnetic wave shielding sheet with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm being impregnated with a resin and/or with the resin being laminated thereon, the sheet exhibiting a superior electromagnetic wave shielding performance with respect to millimeter waves and terahertz waves. The sheet may for example be one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin and/or with the resin being laminated thereon; or one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm, an air permeability of not larger than 0.5 cm/cm·s and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin.

Electromagnetic wave shielding sheet

A manufacturing method comprises: a material preparation step of forming a metal layer on a front side surface of a submount bar body which is to face a laser bar on which a front side electrode and a back side electrode are formed, to prepare a submount bar on which the laser bar is to be mounted; a jig installation step of installing the submount bar and the laser bar that are provided in plural number alternately stacked each other on an installation jig; a bonding step of bonding the metal layer and the back side electrode by increasing the temperature of the installation jig; and a protective film forming step of forming a protective film on cleaved end faces of the laser bar in a protective film forming apparatus using the installation jig in which the submount bars and the laser bars are installed, after the bonding step.

Semiconductor laser device manufacturing method

Provided is a photosintering composition including cuprous oxide particles containing at least one additive element selected from the group consisting of tin, manganese, vanadium, cerium and silver, and a solvent. It is preferable that the cuprous oxide particle contain 1 ppm to 30,000 ppm of tin as the additive element. It is also preferable that the photosintering composition contain 3% by mass to 80% by mass of the cuprous oxide particles and 20% by mass to 97% by mass of the solvent.

Cuprous oxide particle, method of producing the same, photosintering composition, method of forming conductive film using the same and paste of cuprous oxide particles

When a checkpoint comes, the control section selects some of a plurality of small areas which are transfer targets in the memory as small areas to be transferred to the outside of the own computer through the save area (indirect transfer small areas), and selects the others as small areas to be transferred to the outside of the own computer not through the save area (direct transfer small areas). Within a period in which updating from the own computer to the memory is suspended, the control section copies stored data in the small areas selected as the indirect transfer small areas from the memory to the save area with use of the copy section, and in parallel to the copying, transfers stored data in the small areas selected as the direct transfer small areas from the memory to the outside of the own computer with use of the communication section.

Data transfer device

A fault-tolerant system including a plurality of modules each further including a CPU subsystem, a fault-tolerant control unit, and an I/O subsystem, wherein the fault-tolerant control unit includes a master FT control LSI chip and at least one slave FT control LSI chip. One module is placed in an active state while the other module is placed in a standby state, so that I/O requests made by CPU subsystems of these modules are selectively delivered to I/O subsystems based on the master/slave relationship. Upon receiving fault information representing a failed subsystem which is either the CPU subsystem or the I/O subsystem found in the module, the master FT control LSI chip sends a command for controlling isolation of the failed subsystem to the slave FT control LSI chip, so that the slave FT control LSI chip controls isolation of the failed subsystem based on the command.

Fault-tolerant system and fault-tolerant control method

A method for fabricating a semiconductor laser includes: sequentially forming a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a contact layer of the second conductivity type on a semiconductor substrate; forming a promotion film which contacts the contact layer only in a window region proximate an end plane of the semiconductor laser and absorbs group-III atoms from the contact layer to promote generation of group-III vacancies; implanting ions into the contact layer in the window region to damage the contact layer in the window region; and after forming the promotion film and implanting the ions, heat treating so that the group-III vacancies are diffused and the active layer is disordered in the window region and forms a window structure.

Method for fabricating semiconductor laser

A multi-wavelength semiconductor laser device includes a plate stem; a prism shaped submount with a bottom face on a face of the stem; laser diodes having emission wavelengths different from each other are mounted on lateral sides of the submount so that their respective emission points are positioned at substantially the same distance from a center axis of the stem; and lead pins penetrating the stem are located along and opposite edge lines between adjacent pairs of the lateral sides of the submount.

Multi-wavelength semiconductor laser device

The present invention provides a coated conductive powder in which the aggregation of conductive particles is suppressed and which is also excellent in electrical reliability, and a conductive adhesive using the same that can provide connection with high electrical reliability even for the connection of the electrodes of miniaturized electronic parts, such as IC chips, and circuit boards. The coated conductive powder of the present invention is a coated conductive powder obtained by coating the surfaces of conductive particles with insulating inorganic fine particles, wherein the volume resistivity value of the coated conductive powder is 1 &#x3a9;&#xb7;cm or less, the specific gravity of the insulating inorganic fine particles is 5.0 g/ml or less, the particle diameter ratio of the insulating inorganic fine particles to the conductive particles (the insulating inorganic fine particles/the conductive particles) is 1/100 or less, and the insulating inorganic fine particles adhere to the surfaces of the conductive particles.

Coated conductive powder and conductive adhesive using the same

A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of the substrate, and the carrier concentration of the substrate is at least 2.2&#xd7;10cm.

Semiconductor laser device

It is an object of the present invention to provide a coated conductive powder particularly useful as the conductive filler of an anisotropic conductive adhesive used for electrically interconnecting circuit boards, circuit parts, and the like, and a conductive adhesive that can provide connection with high electrical reliability even for the connection of the electrodes of miniaturized electronic parts, such as IC chips, and circuit boards. The coated conductive powder of the present invention is a coated conductive powder obtained by coating the surfaces of conductive particles with an insulating substance, wherein the insulating substance is a powdery, thermally latent curing agent. Also, in the present invention, the particle surfaces of the coated conductive powder are further coated with insulating inorganic fine particles.

There is disclosed a method capable of resetting a fault tolerant computer in complete synchronization among modules. The method includes a step of generating a reset requesting signal by one of the modules, a step of dividing the reset requesting signal to first and second reset requesting signals, a step of transmitting the second reset requesting signal to the other module, a step of delaying the first reset requesting signal in the one module by a time required for transmitting the second reset requesting signal to the other module, a step of resetting at least one CPU included in the one module by a first CPU reset signal generated based on the first reset requesting signal delayed in the one module, and a step of resetting at least one CPU included in the other module by a second CPU reset signal generated based on the second reset requesting signal transmitted to the other module.

Method and system for resetting fault tolerant computer system

In a network switch including a user network port connectable to a user network, a plurality of down link ports each connectable to one server unit, a server unit management network port connectable to a server unit management network for managing the server unit, a store-and-forward switching unit connected to the user network port, the down link ports and the server unit management network port, and a control unit connected to the store-and-forward switching unit, when a packet that has arrived at one of the down link ports is a dynamic host configuration protocol (DHCP) packet including a network boot option, the control unit operates the store-and-forward switching unit to transmit the packet to the server unit management network port.

Network switch for logical isolation between user network and server unit management network and its operating method

After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiOfilm, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiOfilm on the top of the waveguide ridge, and burying the SiOfilm in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiOfilm of the waveguide ridge; the SiOfilm is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

Method for manufacturing semiconductor optical device

A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400&#xb0; C. and 600&#xb0; C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

Method for manufacturing nitride semiconductor light-emitting element

A method for manufacturing a nitride semiconductor device, comprises: epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.

Method for manufacturing nitride semiconductor device

Growing community of inventors

Tokyo, Japan

Shinji Abe