Matsushita Electric Industrial Co., Ltd.

Shinitirou Hayashi

Yasuhiro Shimada

Eiji Fujii

Yasuhiro Uemoto

Atsuo Inoue

Akihiro Matsuda

Tooru Nasu

Tatsuo Ootsuki

Koichi Arita

Masaki Kibe

A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

Semiconductor device having capacitor and manufacturing apparatus thereof

Semiconductor device having capacitor and manufacturing method thereof

Semiconductor device having capacitior and manufacturing method thereof

Growing community of inventors

Osaka, Japan

Shinitirou Hayashi