Samsung Display Co., Ltd.

Shinil Choi

Sanggab Kim

Joongeol Lee

Kyeongsu Ko

Taewook Kang

Sunghoon Yang

Wooyong Sung

Hyuneok Shin

Yugwang Jeong

Hyunmin Cho

Dongmin Lee

Sangwon Shin

Yunjong Yeo

Sangwoo Sohn

Hongsick Park

Dokeun Song

Subin Bae

Hyunah Sung

Changok Kim

Yeoungkeol Woo

Chulmin Bae

Daewon Choi

Byungdu Ahn

A display panel includes a substrate having an opening area, and a display area at least partially surrounding the opening area. Display elements are arranged in the display area. The display elements includes a pixel electrode, an opposite electrode, and an intermediate layer interposed therebetween. A multilayer film includes a first insulating layer between the substrate and the pixel electrode and a second insulating layer, of a different material, on the first insulating layer. A thin film encapsulation layer covers the display elements and includes at least one organic encapsulation layer and at least one inorganic encapsulation layer. The multilayer film includes a first groove disposed between the opening area and the display area. The first groove has an undercut structure in which a lower width of the first groove is greater than an upper width of the first groove.

Display panel and display device including display panel

A display device includes: a first inorganic insulating layer; a wiring disposed on the first inorganic insulating layer; a second inorganic insulating layer covering the wiring; and a display element disposed on the second inorganic insulating layer, wherein the wiring includes a lower layer including at least one of aluminum and an aluminum alloy, an upper layer disposed on the lower layer and including at least one of titanium and titanium oxide, and an intermediate layer disposed between the lower layer and the upper layer and including titanium aluminide.

Display device and method of manufacturing the same

A display panel including a glass substrate having an opening area, and a display area at least partially surrounding the opening area; a thin film transistor on the display area including a semiconductor layer and a gate electrode; a display element electrically connected to the thin film transistor; a multi-layer including an insulating layer and a lower insulating layer. The insulating layer is between the glass substrate and the display element and the lower insulating layer is between the glass substrate and the insulating layer; and a thin-film encapsulation layer covering the display element including an inorganic encapsulation layer and an organic encapsulation layer. The multi-layer includes a first groove between the opening area and the display area. A first width of a portion of the first groove in the lower insulating layer is greater than a second width of a portion of the first groove in the insulating layer.

Display panel, and display device including the same

A mask for thin film deposition includes a first mask which defines an opening, and a second mask on a surface of the first mask, and which defines a plurality of deposition holes and has a multilayer structure, in which the opening and the plurality of deposition holes communicate with each other and provide a passage for a deposition material, a size of each of the plurality of deposition holes is smaller than a size of the opening, and each of the plurality of deposition holes has a shape corresponding to a deposition pattern to be patterned on a substrate.

Mask for thin film deposition, and fabrication method thereof

An organic light-emitting display (OLED) apparatus includes: a first electrode; a second electrode disposed separate from the first electrode; a pixel-defining layer covering an edge of the first electrode and an edge of the second electrode; a first organic functional layer disposed on the first electrode and the pixel-defining layer including a first emission layer; a first opposing electrode covering a top surface and enclosing an outer circumference of side surfaces of the first organic functional layer; a second organic functional layer disposed on the second electrode and the pixel-defining layer including a second emission layer; and a second opposing electrode covering a top surface and enclosing an outer circumference of side surfaces of the second organic functional layer. An area of the first opposing electrode in contact with the pixel-defining layer is greater than an area of the second opposing electrode in contact with the pixel-defining layer.

Organic light-emitting display apparatus and method of manufacturing the same

A display device includes a thin film transistor, a gate insulting layer, an interlayer insulating layer, a data line, a spacer, and a pixel. The thin film transistor includes a semiconductor layer and a gate electrode. The semiconductor layer includes a source region and a drain region on respective sides of the channel region. The gate insulating layer is between the semiconductor layer and the gate electrode. The interlayer insulating layer covers the thin film transistor. The data line contacts the semiconductor layer via a hole passing through the gate insulating layer and the interlayer insulating layer. The spacer is on an inner wall of the hole and contacting the data line. The pixel electrode is electrically connected to the thin film transistor.

Display device

An organic light-emitting display (OLED) apparatus includes: a first electrode; a first organic functional layer disposed on the first electrode, the first organic functional layer including a first emission layer; a first opposing electrode covering a top surface and side surfaces of the first organic functional layer; a second electrode disposed separate from the first electrode; a second organic functional layer disposed on the second electrode, the second organic functional layer including a second emission layer; and a second opposing electrode covering a top surface and side surfaces of the second organic functional layer, wherein a lateral thickness of the first opposing electrode covering the side surfaces of the first organic functional layer is greater than a lateral thickness of the second opposing electrode covering the side surfaces of the second organic functional layer.

A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the gate electrode overlaps a first oxide semiconductor region of the oxide semiconductor, forming a gate insulating film by partially etching the insulating layer using the photosensitive pattern as a mask, where the gate insulating film includes a first insulating region with a first thickness under the photosensitive pattern and a second insulating region with a second thickness less than the first thickness, and performing plasma processing on the gate insulating film so that a second oxide semiconductor region of the oxide semiconductor under the second insulating region becomes conductive.

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Yongin-si, South Korea

Shinil Choi