Shin-Etsu Handotai Co., Ltd.

Shinichiro Yagi

Masatake Nakano

Tomosuke Yoshida

Taishi Wakabayashi

Kenji Meguro

A method for manufacturing a bonded SOI wafer by bonding a bond wafer and a base wafer, each composed of a silicon single crystal, via an insulator film, including the steps of: depositing a polycrystalline silicon layer on the bonding surface side of the base wafer, polishing a surface of the polycrystalline silicon layer, forming the insulator film on the bonding surface of the bond wafer, bonding the polished surface of the polycrystalline silicon layer of the base wafer and the bond wafer via the insulator film, and thinning the bonded bond wafer to form an SOI layer; As a result, it is possible to provide a method for manufacturing a bonded SOI wafer which can prevent single-crystallization of polycrystalline silicon while suppressing an increase of the warpage of a base wafer even when the polycrystalline silicon layer to function as a carrier trap layer is deposited sufficiently thick.

Method for manufacturing a bonded SOI wafer

The present invention provides a method for manufacturing an SOI wafer in which a thickness of an SOI layer is increased by growing an epitaxial layer on the SOI layer of the SOI wafer having an oxide film and the SOI layer formed on a base wafer, wherein the epitaxial growth is performed in such a manner that a reflectivity of a surface of the SOI wafer on which the epitaxial layer is grown in a wavelength region of a heating light at the start of the epitaxial growth falls within the range of 30% to 80%. As a result, in the method for manufacturing the SOI wafer in which a thickness of the SOI layer is increased by growing the epitaxial layer on the SOI layer of the SOI wafer having the oxide film and the SOI layer formed on the base wafer, a method for manufacturing a high-quality SOI wafer with less slip dislocation and others is provided.

Method for manufacturing SOI wafer and SOI wafer

An inspection object silicon wafer for the purpose of detecting crystal defects and the method of detection thereof, which make easy the detection of the number and location of the defects formed on the surface of the silicon wafer by performing heat treatment and epitaxial growth under a temperature condition in which the natural oxide film is removed but the state of the surface of the silicon wafer is preserved, specifically under a hydrogen atmosphere of normal pressure and a temperature between 900&deg; C. and 1080&deg; C., through which defects having pits and projections are generated on the surface of the epitaxial layer, and by detecting the defects having pits and protrusions by a light scattering type particle inspection apparatus.

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Gunma, Japan

Shinichiro Yagi