Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Hitachi Display Devices, Ltd.

Shinichiro Wada

Yohei Yanagida

Tomoyuki Miyoshi

Hideaki Nonami

Mitsuru Arai

Shinya Kajiyama

Satoshi Ueno

Kenji Miyakoshi

Junji Noguchi

Takayuki Oshima

Hiromi Shimamoto

Masaya Iida

Koichiro Miyamoto

Masafumi Suefuji

Hideyuki Hosoe

Keigo Kitazawa

Mitsuri Arai

In an LDMOS transistor, a channel length is reduced to increase a saturation current without causing an off-state breakdown voltage optimized in terms of trade-off between an on-resistance and the off-state breakdown voltage. A short channel region is selectively formed between an element isolation film and a low-concentration body region in which a channel is formed such that the short channel region is located immediately below a gate oxide film. The short channel region has a conduction type opposite to that of the low-concentration body region and has a carrier concentration higher than that of the low-concentration body region. The body region is retreated by the presence of the short channel region toward a high-concentration source region.

Semiconductor device and its manufacturing method

A high voltage ESD protective diode having high avalanche withstand capability and capable of being formed by using manufacturing steps identical with those for a high voltage transistor to be protected, the device having a structure in which a gate oxide film is formed over a substrate surface at a PN junction formed of an N type low concentration semiconductor substrate constituting a cathode region and a P type low concentration diffusion region constituting an anode region, and a gate electrode which is disposed overriding the gate oxide film and a field oxide film is connected electrically by way of a gate plug with an anode electrode, whereby an electric field at the PN junction is moderated upon avalanche breakdown to obtain a high avalanche withstand capability. Further, the withstand voltage can be adjusted by changing the length of the field oxide film.

Method of manufacturing semiconductor device having high voltage ESD protective diode

The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.

Semiconductor device

When MOS transistors having a plurality of threshold voltages in which a source and a drain form a symmetrical structure are mounted on the same substrate, electrically-symmetrical characteristics is provided with respect to an exchange of the source and the drain in each MOS transistor. A MOS transistor having a large threshold voltage is provided with a halo diffusion region, and halo implantation is not performed on a MOS transistor having a small threshold voltage.

The invention is based upon a semiconductor device where a high voltage bipolar transistor is manufactured on the same wafer with a high-speed bipolar transistor, and has a characteristic that the high-speed bipolar transistor and the high voltage bipolar transistor are formed on each epitaxial collector layer having the same thickness and are provided with a buried collector region formed in the same process and having the same impurity profile, the buried collector region exists immediately under a base of the high-speed bipolar transistor, no buried collector region and no SIC region exist immediately under a base of the high voltage bipolar transistor and distance between a base region and a collector plug region of the high voltage bipolar transistor is equal to or is longer than the similar distance of the high-speed bipolar transistor.

Semiconductor device having particular impurity density characteristics

A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor layer. An active transistor area is formed with a base formed along a surface of the semiconductor layer, an emitter region formed in the base, a buried collector in the thin semiconductor layer to contact the insulating layer, a collector contacting the buried collector, and emitter, collector and base contacts. The active transistor area is configured to operate at an emitter current at least in the order of mA (milli-ampere). An isolation trench extends through the semiconductor layer to the insulating layer and surrounds the active transistor area with a distance in the order of &#x3bc;m (micron) from the active transistor area and with a space area of more than 50 &#x3bc;mbetween the active transistor area and the isolation trench.

Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.

In a circuit for converting an input signal Dataof high frequency to an output signal Dataof low frequency, a signal of the frequency band (for example, 10 GHz to 2.5 GHz) which can be processed only with a bipolar ECL circuit is processed with a bipolar ECL circuit. After the frequency of signal up to the maximum frequency which can be processed with a CMOS circuit is lowered, the signal is inputted to the CMOS circuit via a level conversion circuit in order to lower the frequency (for example, 2.5 GHz to 1.25 GHz). Thereby, power consumption of the semiconductor integrated circuit device, particularly the device including the Bi-CMOS circuit can be lowered while high-seed processing characteristic in the signal process of the circuit is maintained.

Semiconductor integrated circuit device

A semiconductor device with a resistor element whose the resistance value can be adjusted to a desired value without changing dimensions thereof is provided. The resistor element is formed of a poly-Si layer formed on an insulator over a semiconductor substrate. An impurity is introduced into the poly-Si layer by the use of ion implantation. In the vicinity of both ends of the poly-Si layer forming the resistor element, silicide layers each made of cobalt silicide or the like are formed over an upper surface of the poly-Si layer. The area of one silicide layer is larger than that of the other silicide layer. By adjusting the area of the one silicide layer, the length between the silicide layers is adjusted and the resistance value of the resistor element can be adjusted without changing the shape of the poly-Si layer.

Semiconductor device and manufacturing method of the same

In a circuit for converting an input signal Data of high frequency to an output signal Data of low frequency, a signal of the frequency band (for example, 10 GHz to 2.5 GHz) which can be processed only with a bipolar ECL circuit is processed with a bipolar ECL circuit. After the frequency of signal up to the maximum frequency which can be processed with a CMOS circuit is lowered, the signal is inputted to the CMOS circuit via a level conversion circuit in order to lower the frequency (for example, 2.5 GHz to 1.25 GHz). Thereby, power consumption of the semiconductor integrated circuit device, particularly the device including the Bi-CMOS circuit can be lowered while high-seed processing characteristic in the signal process of the circuit is maintained.

Growing community of inventors

Fuchu, Japan

Shinichiro Wada