Fujimi Incorporated

Shinichiro Takami

Shogaku Ide

Kohsuke Tsuchiya

Shuhei Takahashi

Yoshio Mori

Katsuyoshi Ina

Naoto Noguchi

Yasuaki Ito

Hiroyuki Oda

Hiroki Kon

Yuichiro Nakagai

Yusuke Kawasaki

Makoto Tabata

Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]:satisfying both of 500≤(1/1) and 0.04≤(2/1);  [A]satisfying both of 200≤(1/√(1)) and 8≤2; and  [B]satisfying both of 500≤(1/1) and 8≤2.  [C]

Polishing composition

Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

Polishing method and polishing composition

Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry Sand a second polishing slurry Sto a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry Scomprises an abrasive Aand a water-soluble polymer P. The polishing removal rate of the first polishing slurry Sis higher than that of the second polishing slurry S.

Method for polishing silicon substrate and polishing composition set

[Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced. [Solution] A method for producing a polished object, which includes a double-side polishing step in which an object to be polished is subjected to double-side polishing using a double-side polishing composition including first abrasive grains having an average primary particle diameter of 40 nm or more and a nitrogen-containing water-soluble polymer to obtain a double-side polished object; and a single-side polishing step in which the double-side polished object is subjected to single-side polishing using a single-side polishing composition including second abrasive grains having an average primary particle diameter of 40 nm or less and a water-soluble polymer, and in which a ratio of an average primary particle diameter (A) of the first abrasive grains with respect to an average primary particle diameter (B) of the second abrasive grains (A)/(B) is more than 1 and 2.5 or less.

Method for producing polished object and polishing composition kit

Provided is a polishing composition, which comprises abrasive grains, a water-soluble polymer, an aggregation inhibitor and water. The ratio R1/R2 is 1.3 or less, where R1 represents the average particle diameter of the particles present in the polishing composition and R2 represents the average particle diameter of the abrasive grains when the abrasive grains are dispersed in water at the same concentration as that of the abrasive grains in the polishing composition. The polishing composition can be used mainly for polishing the surface of a silicon substrate.

Composition for polishing purposes, polishing method using same, and method for producing substrate

A polishing composition is composed of a filtered diluted liquid obtained through an undiluted liquid-preparing step, an undiluted liquid-filtering step, a diluting step, and a diluted liquid-filtering step. In the undiluted liquid-preparing step, an undiluted liquid is prepared by mixing raw materials for the polishing composition. In the undiluted liquid-filtering step, the undiluted liquid is filtered. In the diluting step, the filtered undiluted liquid is diluted to obtain a diluted liquid. In the diluted liquid-filtering step, the diluted liquid is filtered. The polishing composition is used, for example, for polishing a silicon substrate material to produce a silicon substrate.

Polishing composition, manufacturing process therefor, process for production of silicon substrate, and silicon substrate

A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition preferably further contains an alkali compound, a water-soluble polymer, or a chelating agent. The polishing composition is suitable for use in polishing an edge of an object such as a semiconductor substrate.

Polishing composition and polishing method using the same

A polishing composition of the present invention, which is used in polishing the edge of a wafer for semiconductor devices, effectively suppresses remaining amounts of abrasives on the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The average primary particle diameter Dof the silicon dioxide is at least 40 nm. The ratio D/Dof the silicon dioxide is no more than 3.8. The value D/D/Dof the silicon dioxide is no more than 0.07.

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Kiyosu, Japan

Shinichiro Takami