Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Shinichiro Noudo

Hiroyuki Nakano

Kumiko Oguni

Hiroki Hane

Masashi Nakata

Atsushi Toda

Tomohiro Yamazaki

Itaru Oshiyama

Yoichi Ootsuka

Yoshitaka Miyatani

Tomohiko Baba

Yasufumi Miyoshi

Kenju Nishikido

Takekazu Shinohara

Yuji Iseri

Takuji Matsumoto

Yukari Taguchi

Hirohisa Uchida

Tooru Idekoba

Taizo Oishi

Misato Kondo

The present invention relates to a solid-state imaging device capable of highly accurate authentication. The solid-state imaging device includes a light receiving unit and a control unit. The light receiving unit includes event-driven pixels that output the occurrence of an event on the basis of a threshold. The control unit is a control unit that controls the light receiving unit, and is configured to set a first threshold for the event-driven pixels, and, in a case where an event based on the first threshold has been detected, set a second threshold smaller than the first threshold for the event-driven pixels.

Solid-state imaging device and electronic apparatus

Groove portions are provided between adjacent photoelectric conversion portions, and sidewall surfaces and bottom surfaces of the groove portions are covered with a first fixed charge film, and open ends of the groove portions are closed by a second fixed charge film with voids inside of the groove portions.

The solid-state imaging apparatus () according to the present disclosure includes a semiconductor layer (), a light shield wall (), and an insulation layer. The semiconductor layer () is provided with a plurality of photoelectric conversion units and a plurality of charge retention units that retain charge generated by the photoelectric conversion units (). The light shield wall () is provided inside a trench () formed in a depth direction from a light-incident side between the photoelectric conversion units and the charge retention units () adjacent to each other in the semiconductor layer (). The insulation layer is provided on a side of the semiconductor layer () opposite from the light-incident side, and having an opening () that surrounds the trench ().

Solid-state imaging apparatus, method of manufacturing the same, and electronic device

Provided is an electronic device that includes a plurality of pixels, each of at least two pixels of the plurality of pixels includes a first lens that collects incident light, a first light shielding film portion having a first hole through which a part of the incident light that has been collected passes, and a photoelectric conversion unit that converts the incident light having passed through the first hole. A shape of the first hole with respect to the first light shielding film portion is different between a first pixel among the at least two pixels and a second pixel different from the first pixel among the at least two pixels.

Electronic device

A plurality of photoelectric converters is formed on a semiconductor substrate and performs photoelectric conversion according to incident light. A light path portion includes a transparent film through which the incident light is transmitted, a light-blocking wall for each of the plurality of photoelectric converters, the light-blocking wall partitioning the transparent film in a direction perpendicular to the semiconductor substrate, and blocking light, and a light-blocking film at an end of the light-blocking wall, the end being opposite to an end of the light-blocking wall that is closer to the semiconductor substrate, the light-blocking film having a film shape parallel to the semiconductor substrate, and including, for each of the plurality of photoelectric converters, an opening through which the incident light is transmitted. An on-chip lens is arranged for each of the plurality of photoelectric converters, and collects the incident light into the photoelectric converter through the light path portion.

Imaging device and method of manufacturing imaging device

To suppress entrance of incident light into a charge holding section in a pixel to prevent a reduction in image quality. An imaging device includes a pixel array. The pixel array includes a plurality of pixels each including a photoelectric converter that generates a charge depending on incident light, a charge holding section that holds the generated charge, and a charge transfer section that transfers the generated charge to the charge holding section, each of the plurality of pixels generating an image signal depending on the held charge. The charge holding section or the charge transfer section in each of the plurality of pixels is arranged close to an optical center of the pixel array with respect to the incident light.

Imaging device and image-capturing apparatus

To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.

Solid-state image pickup element, method of manufacturing solid-state image pickup element, and electronic apparatus

The incidence of incident light transmitted through a photoelectric conversion unit onto a charge holding unit, a pixel in the adjacency, and the like can be blocked in a pixel. An image sensor includes a pixel, a wiring layer, and an incident light attenuation unit. The pixel includes a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion based on incident light, and a pixel circuit that generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate different from a surface onto which the incident light is incident, and transports either the image signal or a signal applied to the pixel circuit. The incident light attenuation unit attenuates the incident light transmitted through the photoelectric conversion unit.

Image sensor and imaging device

Image plane phase difference pixels that can handle incident light at two or more chief ray angles are realized. A solid-state imaging device includes a pixel, the pixel including a microlens that condenses light from a subject, a photoelectric conversion unit that receives the subject light condensed by the microlens to generate an electrical signal according to an amount of received light, and a light shielding portion provided between the photoelectric conversion unit and the microlens. The light shielding portion includes an edge portion formed across over a light receiving surface of the photoelectric conversion unit, and the edge portion includes a first edge portion and a second edge portion at positions different from each other both in a first direction corresponding to an up and down direction of an output image and a second direction corresponding to a left and right direction of the output image.

Light shields for solid-state imaging devices and imaging apparatuses

To reduce occurrence of crosstalk in a back-illuminated image capturing element. An image capturing element includes: a pixel including a photoelectric conversion section, a pixel circuit, and a wiring layer; and a polarization section. The photoelectric conversion section is formed on a semiconductor substrate and performs photoelectric conversion based on incident light. The pixel circuit generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate and is configured to transmit any one of the image signal or a signal applied to the pixel circuit, the surface being different from a surface of the semiconductor substrate on which the incident light is incident. The polarization section is arranged between the semiconductor substrate and the wiring layer, and allows transmission of light in a specific polarization direction among incident light transmitted through the photoelectric conversion section.

Image capturing element and image capturing device

A decrease in strength is reduced of a polarizer of an imaging element in which the polarizer that detects polarization information of a subject is arranged. The imaging element includes a plurality of pixels. The plurality of pixels included in the imaging element each includes a color filter that transmits light having a predetermined wavelength of incident light and a polarizer that performs polarization of the incident light, and generates an image signal based on the incident light transmitted through the color filter and the polarizer. The polarizer included in each of the plurality of pixels adjusts the polarization depending on the color filter in a corresponding one of the pixels of the imaging element.

Imaging element and imaging device for controlling polarization of incident light

The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed. In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.

Solid-state imaging element, manufacturing method, and electronic apparatus

Solid-state imaging device, imaging apparatus, and manufacturing method of solid-state imaging device with pixels that include light shielding portions

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Kumamoto, Japan

Shinichiro Noudo