Denso Corporation

Shinichiro Nakata

Yusuke Shindo

Tsuneo Maebara

Hiroyuki Ban

Junichi Fukuta

Hiroya Tsuji

Yasutaka Senda

Koichi Nishibata

Tetsuya Dewa

Yasunari Tanimura

Satoshi Ichikawa

A semiconductor integrated circuit device includes digital output terminals and output circuits. Each output circuit includes a switch, and applies a potential, which corresponds to either one of binary logic levels, to corresponding one of the digital output terminals through the switch. An indefinite range is interposed between one of the binary logic levels and the other one of the binary logic levels. The output circuits respectively include potential fixers. Each potential fixer has an identical circuit arrangement, and the potential fixer fixes a potential applied to the digital output terminals through the switch to a potential corresponding to either one of the binary logic levels apart from the indefinite range, in response to that a short circuit occurs between the digital output terminals.

Semiconductor integrated circuit device

A switching power supply device includes a switching element and a diode and generates an output voltage by supplying current to a coil by controlling the switching element to turn on and off. A current detection circuit detects a current flowing in the switching element. A voltage detection circuit monitors a voltage at an output terminal OUT. A control circuit controls the switching element to turn on and off by a current control mode based on a current detection signal and a feedback voltage. The control circuit drives a bleeder circuit to supply a load current to the output terminal when a level of the current detection signal is lower than a predetermined level.

Switching power supply device

In an integrated circuit formed into a single chip, a drive signal generating unit generates drive signals for switching elements of a power conversion circuit. A monitoring unit monitors a microcomputer that calculates generation information that is information used to generate the drive signals, and determines whether or not an abnormality has occurred in the microcomputer. An angle converting unit converts an output signal of an angle sensor to rotation angle information of a rotating electric machine. A drive signal generating unit generates the drive signals for controlling driving of the rotating electric machine based on the generation information and the rotation angle information when the monitoring unit determines that an abnormality has not occurred in the microcomputer, and generates the drive signals based on the rotation angle information, without using the generation information, when the monitoring unit determines that an abnormality has occurred in the microcomputer.

Integrated circuit

A temperature detecting apparatus includes an integrated circuit that integrates an overheating detecting circuit, a breakage detecting circuit and a disabling circuit, and an element connection terminal connecting a temperature sensing element. The disabling circuit disables the breakage detecting circuit from detecting a breakage of wire when a voltage at the element connection exceeds a disabling threshold which is set higher than an overheating detection threshold and a breakage detection threshold. A predetermined voltage higher than the disabling threshold is applied to the element connection terminal when the temperature sensing element is not connected to the element connection terminal.

Apparatus for detecting temperature of switching elements

A charging current is supplied to the gate (control terminal) of a driven switching device during an on-state command interval, for raising the gate voltage to an on-state value. Otherwise, discharging of the gate capacitance is enabled, for decreasing the gate voltage to an off-state value. A second switching device is connected between the gate and a circuit point held at the off-state voltage value, and is maintained in an on state while the gate discharging is enabled. At a first time point, the gate voltage rises above a threshold value. At a second time point, a voltage detection circuit detects that that the gate voltage has risen above the threshold value, causing the second switching device to be set in the off state. It is ensured that the delay between the first and second time points is shorter than a minimum duration of an on-state command interval.

Drive circuit for voltage-control type of semiconductor switching device

An input protection circuit comprises a reverse flow preventing diode, a series circuit of a diode and a Zener diode, and a current path forming resistor or diode. The reverse flow preventing diode is connected between an input terminal and an internal circuit. The series circuit is connected between the input terminal and a ground. The current path forming resistor or diode is connected between a first common connection point of the reverse flow preventing diode and the internal circuit and a second common connection point of the series circuit, and sets a potential at the first common connection point to be less than a potential at the input terminal when the surge voltage is applied to the input terminal.

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Kariya, Japan

Shinichiro Nakata