Seiko Epson Corporation

Shinichiro Kobayashi

Takao Nishikawa

Tatsuya Shimoda

Tadaoki Mitani

Taishi Takenobu

Yoshihiro Iwasa

Toshifumi Yamakawa

An operational comparatorincludes a current source circuit, load circuits driven by the current source circuit, and a current mirror circuit. The load circuits are constituted with MOS transistors, predetermined reference voltage is supplied to the gate terminals of MOS transistors, and each of signal voltages constituting the differential output signal of the differential output circuit is supplied to gate of MOS transistors.

Operational comparator, differential output circuit, and semiconductor integrated circuit

An integrated circuit device includes: an internal circuit disposed on an inside area of the integrated circuit device; and at least one regulator circuit that generates a regulation voltage formed by stepping down a power supply voltage provided from outside, wherein an output terminal of the regulator circuit is connected to a first pad that is an external terminal of the integrated circuit device and a power supply line of the internal circuit, and the regulator circuit controls the state of the output terminal based on a plurality of control signals inputted respectively to a plurality of control terminals.

Integrated circuit device

A method is provided for building an information network via an antenna terminal or an antenna cable disposed in a house for receiving television broadcasting or radio broadcasting. The method comprises step (a) of selecting at least one frequency not used by television broadcasting or radio broadcasting in an area where the house is located; step (b) of modulating a carrier wave having the frequency selected in step (a) by using transmission data transmitted from a first information terminal and transmitting the modulated carrier wave via the antenna terminal or the antenna cable; and step (c) of receiving the carrier wave transmitted in step (b) and demodulating the carrier wave to produce reception data received by a second information terminal.

Information network building method and network connection circuit for communication between terminals of a physical premises

An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.

Organic thin film transistor and method of manufacturing the same

An output circuit is provided for outputting, based on a first drive signal, an output signal with an amplitude smaller than a source voltage, comprising: a first type MOS transistor whose gate is impressed with a first drive signal and whose drain outputs a signal; a second type MOS transistor whose gate is impressed with a second drive signal and whose drain outputs a signal; and feedback circuits generating the second drive signal by feeding an output signal obtained by synthesizing the signal outputted by the first type MOS transistor and the signal outputted by the second type MOS transistor back to the gate of the second type MOS transistor.

Growing community of inventors

Hino, Japan

Shinichiro Kobayashi