Tokyo Electron Limited

Osaka University

Shinichiro Kawakami

Takashi Yamauchi

Masashi Enomoto

Hiroshi Mizunoura

Yohei Sano

Kousuke Yoshihara

Seiji Nagahara

Satoru Shimura

Gousuke Shiraishi

Masaru Tomono

Tomoya Onitsuka

Takahiro Kitano

Makoto Muramatsu

Yuichi Terashita

Tadatoshi Tomita

Shannon W Dunn

Seiichi Tagawa

Akihiro Oshima

Shinichi Hatakeyama

Takanori Nishi

Takahiro Shiozawa

Keisuke Yoshida

Dave Hetzer

Hironori Mizoguchi

Tomonori Esaki

A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection filmis previously formed below a resist film. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection filmfacing a bottom of the recess patternof the resist film. Therefore, the metal componentcan be suppressed from remaining at the bottom of the recess pattern. Therefore, when the SiOfilmis subsequently etched using the pattern of the resist film, the etching is not hindered, so that defects such as bridges can be suppressed.

Substrate processing module

A heat treatment apparatus includes: a stage on which a substrate is placed and heated, the substrate including an exposed resist film formed on a surface of the substrate, and the exposed resist film exhibiting a change in solubility of an exposed portion or an unexposed portion in a liquid developer by reacting with water and being heated; a lifting mechanism configured to relatively raise and lower the substrate between a first position at which the substrate is placed on the stage and a second position which is spaced apart from the stage; and a gas supply configured to supply a first gas to the substrate located at the second position before moving to the first position, the first gas having a humidity higher than that of an atmosphere in which the stage is provided.

Heat treatment apparatus and heat treatment method

Method for forming mask pattern, storage medium, and apparatus for processing substrate

A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.

Substrate processing method, substrate processing apparatus, and computer readable recording medium

A substrate processing apparatus includes a film forming processing unit configured to form a metal-containing resist film on a substrate; a heat treatment unit configured to perform a heating processing on the substrate on which the film is formed and in which an exposure processing is performed on the film; a developing processing unit configured to perform a developing processing on the film formed on the substrate on which the heating processing is performed; and an adjustment controller configured to reduce a difference between substrates in an amount of water that reacts in the film formed on the substrate during the heating processing.

Substrate processing apparatus, substrate processing method and recording medium

There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.

Substrate processing apparatus, substrate processing method and computer-readable recording medium

A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

Coating and developing method and coating and developing apparatus

A thermal treatment apparatus performs a thermal treatment on a metal-containing film formed on a substrate. The thermal treatment apparatus includes a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film. At the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

Substrate treatment method and thermal treatment apparatus

A coating and developing apparatusincludes a first protection processing unit U, a film forming unit U, a first cleaning processing unit Uand a control unit U. The control unit Uis configured to control the first protection processing unit Uto form a first protective film on a peripheral portion Wc of a wafer W, control the film forming unit Uto form a resist film on a front surface Wa of the wafer W, control the first cleaning processing unit Uto supply a first cleaning liquid for removing the resist film to the peripheral portion Wc, control the first cleaning processing unit Uto supply a second cleaning liquid for removing a metal component to the peripheral portion Wc, and control the first cleaning processing unit Uto supply a third cleaning liquid for removing the first protective film PFto the peripheral portion Wc.

A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Exposure apparatus, resist pattern forming method, and storage medium

A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Substrate treatment system

A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

Substrate treatment method, computer storage medium and substrate treatment system

There is provided a method of processing a substrate using a block copolymer composed of a first polymer containing an oxygen atom and a second polymer containing no oxygen atom, the method including: coating the block copolymer onto the substrate on which a predetermined pattern is formed; phase-separating the block copolymer into the first polymer and the second polymer; and heating the substrate in a low oxygen atmosphere to selectively remove the first polymer from the phase-separated block copolymer.

Growing community of inventors

Koshi, Japan

Shinichiro Kawakami