Sony Corporation

Sony Semiconductor Solutions Corporation

Shinichiro Izawa

Tetsuji Yamaguchi

Fumihiko Koga

Itaru Oshiyama

Takeshi Yanagita

Atsuhiko Yamamoto

Kazunobu Ota

Harumi Ikeda

Takayuki Enomoto

Keisuke Hatano

Takuji Matsumoto

Hiroyuki Mori

Keiji Tatani

Kazuichiro Itonaga

Susumu Ooki

Yutaka Nishimura

Norihiro Kubo

Ryoji Suzuki

Tomoo Mitsunaga

Kouichi Harada

Takashi Machida

Ikuo Yoshihara

Hayato Wakabayashi

Atsushi Masagaki

Kyoko Izuha

Kenichi Okumura

Tomonori Masuno

Yasunobu Hitomi

Daisuke Iso

Kyohei Yoshimura

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Solid-state imaging device, method for driving the same, and electronic device for improved auto-focusing accuracy

Solid-state imaging device, method for driving the same, and electronic device for improved autofocusing accuracy

Solid-state imaging device, method for driving the same, and electronic device

The present disclosure relates to an imaging apparatus comprising an image sensor that includes an imaging surface in which many pixels are arranged vertically and horizontally, a pixel control unit that controls the image sensor, selects a pixel corresponding to a sampling function among pixels configuring a block by applying the sampling function for each block acquired by partitioning the imaging surface of the image sensor into a plurality of blocks, and outputs a sampling signal based on a pixel value of the selected pixel, and a reduced image generating unit that generates a reduced image on the basis of the sampling signal for each block output from the image sensor.

Imaging apparatus which performs compressive sensing reading data for a partitioned block output from an image sensor

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

Solid-state imaging device using a phase difference signal, method for driving the same, and electronic device

The present disclosure relates to a solid-state image pickup device and an electronic apparatus capable of generating highly-accurate image pickup signals having a large dynamic range. Pixels each include a high-sensitivity pixel and a low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel. A control gate controls a potential of a photoelectric conversion device of the low-sensitivity pixel. The present disclosure is applicable to, for example, a CMOS image sensor that includes both the high-sensitivity pixel and the low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel and controls a potential of the photoelectric conversion device of the low-sensitivity pixel.

Solid-state image pickup device and electronic apparatus including a solid-state image pickup device having high and low sensitivity pixels

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrateand multiple photoelectric convertersthat are formed on the substrate, an insulating filmforms an embedded element separating unit. The element separating unitis configured of an insulating filmhaving a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portionwhich is formed in the depth direction from the light input side of the substrate

Growing community of inventors

Kanagawa, Japan

Shinichiro Izawa