Panasonic Corporation

Shinichiro Ishihara

Motoyoshi Iwata

Shingo Enomoto

It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage.

High-frequency power amplifier and communication device

To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitoris connected between the base of a bias supply transistorand a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistorin particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.

Growing community of inventors

Osaka, Japan

Shinichiro Ishihara