Matsushita Electric Industrial Co., Ltd.

Other

Matsushita Electronics Corporation

Symetrix Corporation

Panasonic Corporation

Matsushita Electric Ind. Co., Ltd.

Shinichiro Hayashi

Carlos Alberto Paz De Araujo

Larry D McMillan

Tatsuo Otsuki

Koji Arita

Joseph D Cuchiaro

Narayan Solayappan

Yuji Judai

Michael C Scott

Takumi Mikawa

Yoshihisa Nagano

Toshie Kutsunai

Vikram Joshi

Masamichi Azuma

Toru Nasu

Gary F Derbenwick

Yasuhiro Shimada

Eiji Fujii

Yasuhiro Uemoto

Gota Kano

Shinya Natsume

Atsushi Nakamura

Teruhito Ohnishi

Akihiro Matsuda

Keisuke Tanaka

Kiyoshi Uchiyama

Tooru Nasu

Toshitaka Tatsunari

Hisashi Yano

Shinji Nishiura

Itaru Ootani

Yoshihiro Shimada

An inductor includes a flat substrate and a conductor in a spiral shape having a plurality of turns. The plane on which the conductor is formed is substantially in parallel with a principal surface of the substrate. The turns of the conductor are equally spaced from each other in a direction parallel to the plane on which the conductor is formed. An outer one of the turns of the conductor is wider and thinner than an inner one of the turns of the conductor. A level of at least one of a top and a bottom of the conductor differs from one turn to another in a cross section vertical to the plane on which the conductor is formed.

Inductor and method for fabricating the same

A conductive film embedded in a predetermined region on an upper surface of an insulation film and metallic wirings embedded so as to penetrate through the conductive film and protrudes into the insulation film constitute a lower electrode of an MIM capacitor.

Semiconductor device comprising MIM capacitor

A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.

Capacitor and method for fabricating the same

A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.

Semiconductor device using a conductive film and method of manufacturing the same

A method of making a ferroelectric thin film includes the step of forming a ferroelectric thin film with a randomly oriented layered structure on a surface of a conductor layer. At least the surface of the conductor layer has a spherical crystal structure.

Method of making ferroelectric thin film having a randomly oriented layer and spherical crystal conductor structure

As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by CVD using a second source gas. Subsequently, an upper electrode is formed on the second ferroelectric film. In this method, the concentration of bismuth contained in the first source gas is different from the concentration of bismuth contained in the second source gas.

Method for fabricating semiconductor device and semiconductor device

In a method for forming a ferroelectric film of insulating metal oxide on a surface of an electrode with a concave or a convex or in convex shape which is formed above a substrate, multiple types of source gases constituting a material gas and each containing an organometallic compound are introduced into a chamber and main components of the multiple types of source gases are allowed to chemically react with one another with the chemical reaction proceeding depending on the reaction rate. Then, the ferroelectric film is deposited on the surface of the electrode.

Method for forming ferroelectric film and semiconductor device

A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.

Capacitive element and semiconductor memory device

A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-OCVD where an ozone concentration is relatively low. A second TEOS-Ofilm having a relatively small water content is formed on the first TEOS-Ofilm through second TEOS-OCVD where the ozone concentration is relatively high.

Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film

A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of BiOwith an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas ABO, ABOand ABiBO, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaSr)(TaNb)O, where 0&#x2266;y&#x2266;1.0 and 0&#x2266;y&#x2266;1.0; (BaSr)(TaNb)O, where 0&#x2266;x&#x2266;1.0 and 0&#x2266;y&#x2266;1.0; and (BaSr)Bi(TaNb)O, where 0&#x2266;x&#x2266;1.0 and 0&#x2266;y&#x2266;1.0. Thin films according to the invention have a relative dielectric constant &#x2267;40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is &#x3c;1000 ppm, preferably &#x3c;100.

Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7

A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.

Semiconductor memory device

A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.

Method of liquid deposition by selection of liquid viscosity and other precursor properties

A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by carefully controlled drying, soft baking, and annealing conditions.

Growing community of inventors

Osaka, Japan

Shinichiro Hayashi