Tokyo Electron Limited

Tokyo Electron Kyushu Limited

Shinichiro Araki

Noriyuki Anai

Shinko Matsumoto

Hiroshi Tomita

Shuji Iwanaga

Tatsuya Iwasaki

Kouji Okamura

Shinya Tanoue

Katsuhiko Matsuda

Kiminori Okada

Taichi Ito

Susumu Nakajima

Eiichiro Kamada

Nobuhiro Horiuchi

An information processing apparatus for processing information on semiconductor treatment apparatus includes an abnormality information display device which displays information on an abnormality in semiconductor treatment apparatus, a countermeasure information receiving device which receives countermeasure information on countermeasure, a countermeasure information storing device which stores the countermeasure information matched with abnormality identification information, an output device which outputs the countermeasure and abnormality identification information via communication device to outside, a countermeasure item display device which displays countermeasure item candidates, a countermeasure item storing device which stores countermeasure item selected from the candidates matched with the abnormality identification information, a countermeasure item transmitting device which transmits the countermeasure item and abnormality identification information via the communication device to outside, a countermeasure item statistic receiving device which receives statistic regarding the countermeasure item corresponding to the abnormality identification information from outside, and a countermeasure item statistic display device which displays the statistic.

Information processing apparatus, processing system, processing method, and program

In the present invention, a heating plate is divided into a plurality of regions. Integrated values of temperature fluctuations in each of the regions when a substrate is mounted on the heating plate in a normal state without extraneous matter are collected. A Mahalanobis reference space in the discriminant analysis method is formed based on the integrated values at normal time. During actual heat processing, an integrated value of temperature fluctuation of each of the regions when the substrate is mounted on the heating plate is then detected, so that a Mahalanobis distance about the integrated value during the processing is calculated based on the integrated value during the processing and the Mahalanobis reference space obtained in advance. Whether or not there is extraneous matter on the heating plate is determined by comparing the calculated Mahalanobis distance to a predetermined threshold value.

Method of detecting extraneous matter on heat processing plate, heat processing apparatus, program, and computer-readable recording medium with program recorded thereon

A substrate processing method and a substrate processing system exclude wafers W provided with a protective film having surface defects that will cause components of a resist to dissolve in an immersion liquid during an immersion exposure process, and rated abnormal from those to be processed by the immersion exposure process. The substrate processing system is provided with a protective film forming module for forming a protective film on a resist film formed on a surface of a wafer W, an exposure systemfor processing the surface of the wafer W coated with a transparent immersion liquid layer by an immersion exposure process, and a developing modulefor processing the wafer W by a developing process using a developer. A protective film inspecting devicedetects surface defects in a protective film formed on a wafer W. A control computerdecides whether or not surface defects detected by the protective film inspecting deviceis normal on the basis of information about the surface defects provided by the protective film inspecting device, and gives a control signal representing the results of decision to the exposure system. The control computergives an exposure process execution signal requesting processing the wafer W by the exposure process to the exposure systemwhen the surface defects in the protective film are rated normal or gives an exposure process not executing signal requesting not processing the substrate by the exposure process to the exposure system when the surface defects in the protective film are rated abnormal.

Substrate processing method and substrate processing system

A coating and developing apparatus for coating a substrate with a plurality of color resists and for developing it after exposure, comprises: a scrubbing unit for scrubbing the substrate; a coating unit having a plurality of resist discharge nozzles for respectively discharging a plurality of color resists on the scrubbed substrate; and a developing unit for developing the substrate coated with the color resists after exposure. Accordingly, reduction in size of apparatus and space savings can be achieved, and manufacturing cost can also be reduced.

Coating and developing method

Coating and developing apparatus

The present invention is a conveying unit having a controller for detecting information corresponding to the thickness of each of a plurality of raw substrates, assigning desired identifiers to the raw substrates, storing the identifiers, and causing a conveyor to convey each of the raw substrates or controlling processing conditions for a plurality of processing chambers with the identifiers corresponding to the thickness of each of the raw substrates. Thus, even if one cassette accommodates a plurality of raw substrates, the conveyor can smoothly load the same type of raw substrates to the accommodating cassette and unload them therefrom in a simple structure. The controller sets desired processing conditions for each of the processing portions corresponding to the identifiers.

Conveying unit and substrate processing unit

A resist coating system for semiconductor wafers has a treatment unit and a transfer unit. The treatment unit has a plurality of treatment sections, and a transfer robot moves along the treatment sections. The transfer robot has a vertically movable driving block and first, and second and third arms for holding the semiconductor wafers, which are vertically arranged on the driving block and supported by the same such that they can advance and retreat independent of one another, and an adiabatic plate supported by the driving block between the third arm and the first and second arms. The third arm is used to take each wafer out of a cooling section, which is one of the treatment section. The wafer exchange in each treatment section is performed by means of two of the first through third arms. An arm for taking from the treatment section a wafer having been treated is operated in synchronism with another arm for inserting into the section a wafer to be treated.

Growing community of inventors

Koshi, Japan

Shinichiro Araki