Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Minebea Company, Limited

Imec Vzw

Shinichi Yoshida

Tomoyuki Hirano

Yoshiharu Kudoh

Hirotoshi Nomura

Yoichi Ueda

Tetsuya Uchida

Ryoji Suzuki

Toshifumi Wakano

Hiroyuki Mori

Yusuke Tanaka

Shin Iwabuchi

Kosuke Nakanishi

Yukari Takeya

Hideyuki Honda

Masashi Ohura

Hisahiro Ansai

Shunsuke Maruyama

Shuji Manda

Ryosuke Matsumoto

Tomomasa Watanabe

Matty Caymax

Geoffrey Pourtois

Hiromi Wano

Hideki Minari

Takamasa Tanikuni

Takanobu Koyama

Eddy Simoen

Yoshikazu Saka

There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Solid-state imaging apparatus and electronic apparatus

Provided is an imaging device in which the degree of freedom in the layout can be improved. The imaging device includes a first substrate part that includes a sensor pixel to perform photoelectric conversion, and a second substrate part that is disposed on one surface side of the first substrate part and that includes a reading circuit to output a pixel signal based on an electric charge outputted from the sensor pixel. The second substrate part includes a first semiconductor substrate on which a first transistor included in the reading circuit is disposed, and a second semiconductor substrate which is disposed on one surface side of the first semiconductor substrate and on which a second transistor included in the reading circuit is disposed.

Imaging device with improved layout of reading circuit transistors

The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Solid-state imaging element, method for manufacturing the same, and electronic apparatus

The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

Light-receiving element, method of manufacturing light-receiving element, imaging device, and electronic apparatus

This light-receiving element includes a plurality of photoelectric conversion layers, each of which includes a compound semiconductor, and absorbs a wavelength in an infrared region to generate an electric charge, and an insulating film that is provided to surround each of the plurality of photoelectric conversion layers.

Light-receiving element, manufacturing method of the same, imaging device, and electronic apparatus

A method of producing a III-V fin structure within a gap separating shallow trench isolation (STI) structures and exposing a semiconductor substrate is disclosed, the method comprising providing a semiconductor substrate, providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein said gap is bounded by said at least two identical STI structures, and, producing a III-V fin structure within said gap on the exposed semiconductor substrate, and providing a diffusion barrier at least in contact with each side wall of said at least two identical STI structures and with side walls of said III-V fin structure and wherein said semiconductor substrate is a Si substrate.

Method of producing a III-V fin structure

According to the present disclosure, it is possible to further miniaturize the gate electrode of the field-effect transistor. The field-effect transistor includes a substrate; a semiconductor layer configured to be formed on the substrate and have a fin region formed thereon with a source region and a drain region formed at both ends of the fin region; and a gate electrode configured to have a convex portion partially in contact with at least two faces of the fin region.

Field-effect transistor, field-effect transistor manufacturing method, solid-state imaging device, and electronic apparatus

An electromagnetic clutch comprises a rotor rotatable with respect to the center of rotation, an armature facing the rotor with a clearance, a device for generating a magnetic attracting force between the rotor and the armature, a rotating member transmitting a driving force from the armature, and a plate spring for mounting the armature on the rotating member. The plate spring extends in a direction opposite to the center of rotation and has a first end separated from the center of rotation. The first end or a portion in the vicinity of the first end contacts an armature surface facing the rotor, and the plate spring is fixed to the rotating member at a portion other than the portion contacting the armature surface. The armature is supported such that the armature is urged to be separated in a direction opposite to the rotor by an elasticity of the plate spring.

Electromagnetic clutch

A solid-state imaging device includes a light-receiving portion, which serves as a pixel, and a waveguide, which is disposed at a location in accordance with the light-receiving portion and which includes a clad layer and a core layer embedded having a refractive index distribution in the wave-guiding direction.

Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus

A demagnetizer for display unit which allows to reliably demagnetize without bothering the user thereof. A start pulse a1 is sent out from a timer 21 to an activating pulse generating circuit 22 in every predetermined time t1 to sent out an activating pulse b. Receiving the activating pulse b, a demagnetizing current generating circuit 23 sends out a demagnetizing current I to a degauss coil 1 to demagnetize a magnetized shadow mask (or aperture grille). The activating pulse b is also supplied to a reset pulse generating circuit 24 to send out a reset pulse c to the timer 21. Thereby a counting of the timer 21 is reset and the start pulse a1 is sent out as the predetermined time t1 elapses. This demagnetizer allows to carry out the demagnetizing action without bothering the user.

Growing community of inventors

Kanagawa, Japan

Shinichi Yoshida