Kabushiki Kaisha Toshiba

Toyota Jidosha Kabushiki Kaisha

Shinichi Umekawa

Tetsujiro Tsunoda

Masakazu Yamaguchi

Masahiro Tanaka

Tadashi Matsuda

Tetsuya Kanata

Satoshi Nakao

Koji Terada

Kaoru Imamura

Yasushi Takahashi

Hidetoshi Nakanishi

Hiroki Muraoka

A semiconductor device is provided with a semiconductor substrate having circuit elements formed therein, and an insulating protective film formed on the semiconductor substrate. Hydroxyl groups (OH) are attached to a surface of the protective film. As a result, the contact angle between surface of the protective film and a water droplet is less than or equal to 40 degrees.

Semiconductor devices and manufacturing method thereof

A semiconductor device with high turn off capability includes a plurality of stripe trench lines which are provided in each of adjacent cell regions of a semiconductor layer in parallel and extended from one cell region toward the other cell region, a gate insulating film formed in each of the trench lines, and a gate electrode embedded in each of the trench lines with the gate insulating film interposed therebetween. In this semiconductor device, in each of the cell regions, part of adjacent ends of the plurality of trench lines on a side of the other cell region are connected to each other by connecting portions, and portions between the remaining adjacent ends are open. Moreover, at least one of the connecting portions of one cell region faces one of the open portions of the other cell region.

Semiconductor device

The power semiconductor device includes a plurality of trenches disposed in a surface of a semiconductor active layer to reach a first base layer of a first conductivity type. The trenches are disposed at intervals to partition a main cell and a dummy cell. In the main cell, a second base layer of a second conductivity type and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode and gate insulating film are disposed in each trench. A partition structure is disposed in the surface of the semiconductor active layer to electrically isolate the buffer layer from the emitter electrode.

Power semiconductor device

In an over current protection circuit of a semiconductor switching device, a change in a main current of a semiconductor switching device with respect to a change in the detected voltage of the resistor for current detection connected to the current detection terminal of the semiconductor switching device becomes gentle in the vicinity of a location where the semiconductor switching device is turned off. With the provision of the current protection circuit, the variation in the cut-off level of the over current with respect to the variation in the detected voltage of the resistor for current detection connected to the current detection terminal of the semiconductor switching device is suppressed so that the semiconductor switching device can be protected from being breakdown due to the over current flow.

Over current protection circuit of semiconductor switching device

A power semiconductor module comprises a circuit board made of an insulating substrate of good thermal conductivity formed with interconnect patterns, a plurality of power semiconductor chips mounted on the circuit board, bonding wires for electrically connecting the semiconductor chips and the interconnect patterns, outer lead terminals fixed to the interconnect patterns, and a resin layer for covering at least the chip mounted surface of the circuit board in its entirety so that the tip of each of the outer lead terminals is exposed.

Growing community of inventors

Sagamihara, Japan

Shinichi Umekawa