Renesas Electronics Corporation

Dexerials Corporation

Other

Nec Electronics Corporation

Toyota Jidosha Kabushiki Kaisha

Kyowa Hakko Kirin Co., Limited

Shinichi Uchida

Yasutaka Nakashiba

Keisuke Aramaki

Takasuke Hashimoto

Takatsugu Nemoto

Tadashi Maeda

Takafumi Kuramoto

Shinpei Watanabe

Masahiko Ito

Shinichi Kuwabara

Takuhiro Ishii

Yoshitsugu Kawashima

Hiroki Kanaya

Atsuya Yoshinari

Hiroshi Ise

Shigeru Tanaka

Masayuki Furumiya

Tetsuya Iida

Kazuo Henmi

Fumiaki Marumo

Sei Sasaki

Shunsuke Uchida

Kiyohide Fushimi

Kazunori Go

Hiroshi Oe

Noriko Yoshikawa

Yoshiyuki Sato

Takuo Funaya

Shunichi Kaeriyama

Kenji Nishikawa

Keiichiro Tanaka

Risho Koh

Jun Morimoto

Hirokazu Nagase

Kozo Kato

Yu Nomura

Toshinori Kiyohara

Tomoyuki Kanda

Masato Kanno

Hidetoshi Morishita

Masato Taki

Takashi Iwadare

Hideo Ohba

Shinsaku Yoneda

Akio Ono

Syunsuke Uchida

Mika Yonezawa

Hiroshi Sakakibara

Makoto Eguchi

Kimio Hosoki

Gupta Rishabh

A semiconductor device includes a semiconductor substrate, a semiconductor element, and a multilayer wiring. The semiconductor element is formed on the semiconductor substrate. The multilayer wiring includes a wiring electrically connected with the semiconductor element, and a first inductor. The multilayer wiring is formed on the semiconductor substrate such that the multilayer wiring covers the semiconductor element. The first inductor is formed such that the first inductor electrically isolated from the wiring and is magnetically connected with the wiring.

Semiconductor device and method of manufacturing the same

A semiconductor device includes: a first substrate; a multilayer wiring layer formed on the first substrate; a first inductor formed into a meander shape on the multilayer wiring layer in a plan view; and a second inductor formed into a meander shape on the multilayer wiring layer in a plain view, and arranged so as to be close to the first inductor in a plan view and not to overlap with the first inductor. A transformer is configured by the first inductor and the second inductor and, in a plan view, the first inductor and the second inductor extend along a first direction in which one side of the first substrate extends.

Semiconductor device

Provided is a thermal conducting sheet, including: a binder resin; insulating-coated carbon fibers; and a thermal conducting filler other than the insulating-coated carbon fibers, wherein the insulating-coated carbon fibers include carbon fibers and a coating film over at least a part of a surface of the carbon fibers, the coating film being formed of a cured product of a polymerizable material.

Thermal conducting sheet, method for manufacturing thermal conducting sheet, heat dissipation member, and semiconductor device

A semiconductor device includes a plurality of first wires formed in a first layer, a plurality of second wires formed to intersect the plurality of first wires in a second layer stacked on the first layer, a plurality of first vias formed at intersections of the plurality of first wires and the plurality of second wires, and an inductor formed in a third layer stacked on the first layer and the second layer.

Semiconductor device, electronic circuit having the same, and semiconductor device forming method

A first semiconductor chip and a second semiconductor chip are stacked such that a first inductor and a second inductor face each other. An insulating sheet is disposed between the first semiconductor chip and the second semiconductor chip. The sealing member seals the first semiconductor chip, the second semiconductor chip, and the insulating sheet. The sealing member is disposed both between the insulating sheet and the first semiconductor chip and between the insulating sheet and the second semiconductor chip.

In a semiconductor device, a semiconductor substrate includes a bulk layer, a buried oxide layer provided in at least a partial region on the bulk layer, and a surface single crystal layer on the buried oxide layer. An inductor is provided above a main surface side of the semiconductor substrate on which the surface single crystal layer is disposed. To increase a Q value of the inductor, a ground shield is an impurity region formed in the bulk layer below the inductor and below the buried oxide layer.

A method of manufacturing a semiconductor device includes a step of: patterning a conductive film formed over an interlayer insulating film so as to form a coil and a conductive pattern in the same layer, and then forming unevennesses on a surface of the interlayer insulating film by etching a portion of the interlayer insulating film with using the coil and the conductive pattern as a mask.

Semiconductor device with inductive coupling and method of manufacturing the same

A thermal conducting sheet, including: a binder resin; insulating-coated carbon fibers; and a thermal conducting filler other than the insulating-coated carbon fibers, wherein a mass ratio (insulating-coated carbon fibers/binder resin) of the insulating-coated carbon fibers to the binder resin is less than 1.30, and wherein the insulating-coated carbon fibers include carbon fibers and a coating film over at least a part of a surface of the carbon fibers, the coating film being formed of a cured product of a polymerizable material.

Thermally conductive sheet, production method for thermally conductive sheet, heat dissipation member, and semiconductor device

According to one embodiment, a semiconductor deviceincludes an Si substrate, an inductorformed in wiring layers disposed above the Si substrate, and a shieldformed so as to surround the inductor, in which the shieldincludes metalstoformed in, among the wiring layers, a layer in which the inductoris formed and a layer above that layer, and a silicideformed between the Si substrateand the wiring layers above the Si substrate

Semiconductor device, electrical energy measurement instrument, and manufacturing method of semiconductor device

A thermal conducting sheet including: a binder resin; carbon fibers; and a thermal conducting filler other than the carbon fibers, wherein a mass ratio (carbon fibers/binder resin) of the carbon fibers to the binder resin is less than 1.30, wherein an amount of the thermal conducting filler is from 48% by volume through 70% by volume, and wherein the carbon fibers are oriented in a thickness direction of the thermal conducting sheet.

A semiconductor device includes an annular seal ring formed in a seal ring region surrounding a circuit forming region. The seal ring includes a BOX layer, an n-type semiconductor layer, and an annular electrode portion comprised of multiple layers of wirings. The electrode portion is electrically connected with the n-type semiconductor layer through a plug electrode.

A semiconductor device of the present invention includes, in a regionC, a top electrode made by a semiconductor layer of an SOI substrate, a capacitive insulating film made by an insulating layer, a bottom electrode made by a supporting board, and a lead part (a high-concentration impurity region of an n type) of the bottom electrode coupled to the supporting board. An SOI transistor in a regionB is formed over a main surface of the semiconductor layer over the insulating layer as a thin film, and threshold voltage can be adjusted by applying a voltage to a well arranged on the rear face side of the insulating layer.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes: a plurality of first wires formed in a first layer and indicating fixed potentials; and an inductor formed in a second layer stacked on the first layer, and wiring widths of the first wires located within a range of a formation region of the inductor in a plan view among the plurality of first wires are formed narrower than wiring widths of the first wires located outside the range of the formation region of the inductor.

The problem is to provide a method that can quickly and efficiently evaluate the toxicity of human cerebrospinal fluid (CSF) with small amounts of human CSF. The problem is solved by a method comprising administering human CSF into the cerebral ventricle of a rodent such as a mouse, and evaluating the cognitive function of the rodent by using a behavioral pharmacological technique.

Method for measuring toxicity of human CSF

A semiconductor device includes a first semiconductor chip including a first plurality of wiring layers, and a first coil, a first bonding pad, and first dummy wires formed in an uppermost layer of the first plurality of the wiring layers, and a second semiconductor chip including a second plurality of wiring layers, a second coil, a second bonding pad, and second dummy wires formed in an uppermost layer of the second plurality of the wiring layers. The first semiconductor chip and the second semiconductor chip face each other via an insulation sheet. The first coil and the second coil are magnetically coupled with each other.

Growing community of inventors

Kanagawa, Japan

Shinichi Uchida