Technos Co., Ltd.

Shinichi Terada

A pore- or particle-size distribution measurement apparatus is provided. When the size of a pore existing in a porous insulator film or the size of a particle in a thin film is measured, a specimen having the insulator film on the surface of a substrate is irradiated, from the surface side thereof, with X-rays at a specified incident angle larger than the total reflection critical angle of the insulator film but less than 1.3 times the total reflection critical angle of the substrate. In the irradiated X-rays, among components exiting from the insulator film without entering the pore and scattering of reflection component of the X-rays reflected on the surface of the substrate after having entered the insulator film, the scattered component whose exit angle is larger than that of a component of the reflection component which exits from the insulator film without entering the pore is detected.

Pore- or particle-size distribution measurement apparatus

An apparatus and method for accurately analyzing transition metal such as iron and copper contained as impurities in a hafnium-containing film on a semiconductor substrate, which is a sample, is provided. Ir-L&#x3b1; rays selected and split by a monochromator from X rays generated from an X-ray tube having an anode containing iridium, is applied to the sample so as to totally reflect on a hafnium film of the sample, and the fluorescent X rays generated in a direction other than the total reflection direction are detected by a detector. This makes it possible not only to detect Fe&#x2014;K&#x3b1; rays, but also to suppress generation of Hf-L&#x3b1; rays which interferes with detection of Cu&#x2014;K rays, and to shift the upper limit energy of the Raman scattering to be small so as to cancel overlapping with Cu&#x2014;K rays.

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Kyoto, Japan

Shinichi Terada