Kioxia Corporation

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Shinichi Sotome

Tatsufumi Hamada

Tomohiro Kuki

Yosuke Mitsuno

Wataru Sakamoto

Yasuhiro Uchimura

Fumitaka Arai

Takashi Kobayashi

Ryota Suzuki

Tatsuya Kato

Koichi Matsuno

Takeshi Sakaguchi

Tatsunori Isogai

Masaki Noguchi

Tadayoshi Watanabe

Kenta Yamada

Yuya Akeboshi

Yasunori Oshima

Ken Komiya

Naoki Kai

Muneyuki Tsuda

Hirokazu Sugiyama

Yoshihisa Fujii

Yosuke Mutsuno

Osamu Arisumi

According to one embodiment, a semiconductor storage device includes a substrate, a first electric charge holder, and a channel layer. At least a part of the first electric charge holder is curved in a first cross section along a surface of the substrate. The channel layer is inside the first electric charge holder in the first cross section. At least a part of the channel layer is curved in the first cross section. The first electric charge holder has a curvature varying in accordance with a position in the first cross section. The channel layer has a film thickness varying in accordance with the curvature of the first electric charge holder in the first cross section.

Semiconductor storage device and method of manufacturing semiconductor storage device

A semiconductor storage device includes a first stacked body, a second stacked body, an intermediate insulating layer, and a plurality of columnar bodies. The intermediate insulating layer is located between a first stacked body and a second stacked body and has a thickness in the stacking direction larger than that of one insulating layer in the plurality of insulating layers of the first stacked body. The plurality of columnar bodies are provided over the first stacked body and the second stacked body, and each columnar body includes a semiconductor body, a charge storage film provided between at least one of the plurality of conductive layers and the semiconductor body, and a semiconductor film. Each of the plurality of columnar bodies include a first columnar portion formed in the first stacked body, a second columnar portion formed in the intermediate insulating layer, and a third columnar portion formed in the second stacked body. A width of the semiconductor film in the second columnar portion in a direction intersecting the stacking direction is the shortest at an upper end of the intermediate columnar portion and the longest at a lower end of the intermediate columnar portion.

Semiconductor storage device and method for manufacturing semiconductor storage device

A semiconductor device includes: a first stacked film including first electrode layers; an insulating layer provided on the first stacked film; a second stacked film provided on the insulating layer and including second electrode layers; and a columnar portion extending through the first stacked film, the insulating layer, and the second stacked film. The columnar portion extending in the insulating layer includes a first portion having a first width in a second direction intersecting the first direction, and a second portion provided at a different location along the first direction and having a second width in the second direction. The columnar portion extending in the second stacked film includes a third portion having a third width along the second direction. The second width is larger than the first width and the third width.

Semiconductor device and method for manufacturing the same

A semiconductor memory device includes a semiconductor substrate, a first stacked body including a plurality of first insulating layers and a plurality of first conductive layers alternately stacked in a first direction intersecting a surface of the semiconductor substrate, a second stacked body including a plurality of second insulating layers and a plurality of second conductive layers alternately stacked in the first direction of the first stacked body, a third insulating layer arranged between the first stacked body and the second stacked body, and a pillar penetrating the first stacked body, the third insulating layer, and the second stacked body, the pillar comprising a semiconductor layer extending in the first direction and a charge storage layer extending in the first direction and arranged between the plurality of first conductive layers and the semiconductor layer and between the plurality of second conductive layers and the semiconductor layer.

Semiconductor memory device and method of manufacturing thereof

According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate. The semiconductor layer includes a first portion on a side of an upper portion of the structure, and a second portion between the first portion and the substrate. The first portion has a thickness larger than a thickness of the second portion.

Memory device

A semiconductor storage device includes: conductive layers arranged in a first direction; a first insulating layer extending in the first direction; a first semiconductor layer between the conductive layers and the first insulating layer; and a gate insulating film between the conductive layers and the first semiconductor layer. The first semiconductor layer includes a first region between a first insulating portion and the first conductive layer, a second region between a second insulating portion and the second conductive layer, and a third region between the first region and the second region. The third region includes a fourth region extending in a second direction, a fifth region between the first region and the fourth region, a sixth region between the second region and the fourth region, and a seventh region between the fifth region and the first region and extending in the first direction.

Semiconductor storage device and manufacturing method thereof

A semiconductor device according to an embodiment includes a stacked body having first films and second films that are alternately stacked, a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films, and a channel film extending in the stacked body in the stacking direction. The channel film includes a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor.

Semiconductor device with hybrid channel

According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.

Semiconductor memory device and manufacturing method of semiconductor memory device

According to one embodiment, a semiconductor memory device includes a base layer, conductive layers, an insulation layer, a semiconductor layer and a charge storage layer. The conductive layers are stacked above the base layer in a first direction. The insulation layer is extending in the conductive layers in the first direction. The semiconductor layer is arranged between the insulation layer and the conductive layers. The charge storage layer is arranged between the semiconductor layer and the conductive layers. The insulation layer includes a first insulation layer arranged on a side of the base layer and containing polysilazane and a second insulation layer arranged on the first insulation layer on a side opposite from the base layer.

Semiconductor memory device

A semiconductor storage device includes a stacked body and a columnar body. The stacked body includes a plurality of conductive layers and a plurality of insulating layers that are alternately stacked in a first direction. The columnar body extends through the stacked body in the first direction and includes a core portion, a channel film, a tunnel oxide film, and a charge storage film in this order from a center portion thereof. The channel film has a first region in contact with the core portion and a second region in contact with the tunnel oxide film. The first region is a semiconductor doped with impurities. The second region is a semiconductor. A concentration of the impurities in the second region is lower than that in the first region.

Semiconductor storage device with columnar body having impurity containing channel film

A semiconductor device including a first isolation region dividing a semiconductor substrate into first regions; memory cells each including a tunnel insulating film, a charge storing layer, an interelectrode insulating film, and a control gate electrode above the first region; a second isolation region dividing the substrate into second regions in a peripheral circuit region; and a peripheral circuit transistor including a gate insulating film and a gate electrode above the second region. The first isolation region includes a first trench, a first element isolation insulating film filled in a bottom portion of the first trench, and a first gap formed between the first element isolation insulating film and the interelectrode insulating film. The second isolation region includes a second trench and a second element isolation insulating film filled in the second trench. The first and the second element isolation insulating films have different properties.

Semiconductor storage device and method of manufacturing the same

According to an embodiment, a non-volatile memory device includes a memory cell including a semiconductor layer, a charge storage layer provided on the semiconductor layer, and a first insulating film provided between the semiconductor layer and the charge storage layer. The device also includes a first conductive layer provided on the charge storage layer, a second conductive layer provided between the charge storage layer and the first conductive layer, a second insulating film provided between the charge storage layer and the second conductive layer, and a third insulating film provided between the first conductive layer and the second conductive layer.

Non-volatile memory device and method for manufacturing same

A nonvolatile semiconductor memory device according to an embodiment includes: a memory cell array in which a plurality of NAND cell units are arranged, the NAND cell units including a plurality of memory cells, and select gate transistors, the memory cell including a semiconductor layer, a gate insulating film, a charge accumulation layer, and a control gate; and a control circuit. The control circuit adjusts a write condition of each of the memory cells in accordance with write data to each of the memory cells and memory cells adjacent to the memory cells within the data to be written.

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Yokkaichi, Japan

Shinichi Sotome