Kabushiki Kaisha Toshiba

Shinichi Sanda

Yukio Watanabe

Takanobu Kamakura

Takafumi Nakamura

Kazuhiro Tamura

Yoshio Ariizumi

Takumi Komoto

Makoto Yamamura

A semiconductor light emitting element exhibiting a characteristic of deflected luminous intensity distribution, a semiconductor light emitting device capable of making, even when the element is off the center, a luminous center close to the center, and an element scribing method having a high element separation rate without causing a crack and chipping of pellet edges. The semiconductor light emitting element involves the use of a scribed pellet 10 into which a wafer including a semiconductor layer such as a luminous layer that is stacked on a compound semiconductor substrate inclined at 5.degree. through 20.degree. to a surface (100) in a orientation [011], is subjected to an element separation process by a scribing method.

Semiconductor light emitting element, semiconductor light emitting

Growing community of inventors

Nakatsu, Japan

Shinichi Sanda