Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Shinichi Okada

Syunsuke Kido

Kentaro Nakamura

An acoustic wave device includes a substrate, a first resonator, a second resonator, and a shared reflector. The second resonator is adjacent to the first resonator and has different frequency characteristics different than the first resonator. The first resonator includes a first interdigital transducer electrode. The second resonator includes a second interdigital transducer electrode. The shared reflector has frequency characteristics that are the same as both frequency characteristics of the first resonator and frequency characteristics of the second resonator or between the frequency characteristics of the first resonator and the frequency characteristics of the second resonator. a higher-order mode frequency of the first resonator and a higher-order mode frequency of the second resonator coincides. When the number of electrode fingers of the shared reflector is even, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have the same polarity. When the number of electrode fingers of the shared reflector is odd, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have opposite polarities.

Acoustic wave device, and ladder filter including the same

An acoustic wave filter includes first and second series-arm resonators, each including an IDT electrode including electrode fingers and a busbar electrode connecting first ends of the electrode fingers to each other. A direction in which second ends of the electrode fingers are aligned with each other crosses a propagation direction of an acoustic wave. The electrode fingers of the IDT electrodes of the first and second series-arm resonators each include an electrode-finger central portion and a wide portion located at the second end and being wider than the electrode-finger central portion. The length of the wide portion of each of the electrode fingers in the first series-arm resonator is greater than the length of the wide portion of each of the electrode fingers in the second series-arm resonator.

Acoustic wave filter

An elastic wave filter device includes a ladder filter that includes series arm resonators and parallel arm resonators. In one series arm resonator in which the acoustic velocity in a first and second edge area is lower than in a central area, each first electrode finger includes a large-width portion having a width larger than in remaining portions in the second edge area, and each second electrode finger includes a large-width portion having a width larger than in remaining portions in the first edge area. In at least one of remaining series arm resonators and the parallel arm resonators, each first and second electrode finger includes a large-width portion having a width larger than in remaining portions in both of the first and second edge areas.

Elastic wave filter device

A multiplexer includes first and second nodes, an inductor, a first transmit/receive filter, and second and third transmit filters. The inductor is connected at one end to the first node and at the other end to the second node. The first transmit/receive filter is connected to the first node without the inductor interposed therebetween and uses the transmit and receive bands of band A as a pass band. The second transmit filter is connected to the second node and uses the transmit band of band B as a pass band. The third transmit filter is connected to the second node and uses the transmit band of band C as a pass band.

Multiplexer

An elastic wave device includes a multilayer body, an antenna terminal, a ground terminal, a signal terminal, an IDT electrode, and an insulating film. The multilayer body includes a support substrate and a piezoelectric film disposed on the support substrate. The antenna terminal is disposed on or above the support substrate. The ground terminal is directly disposed on the support substrate. The signal terminal is disposed above the support substrate. The IDT electrode is disposed on the piezoelectric film. The insulating film is disposed between the support substrate and the signal terminal. The multilayer body includes one of a layer made of a high acoustic-velocity material and an acoustic reflection layer.

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Nagaokakyo, Japan

Shinichi Okada