Toshiba Mitsubishi-electric Industrial Systems Corporation

Tokyo Kogaku Kikai Kabushiki Kaisha

W.l. Gore & Associates, Co., Ltd.

Hoya Corporation

Tohoku University

Tmeic Corporation

Shinichi Nishimura

Yoichiro Tabata

Kensuke Watanabe

Yujiro Okihara

Yoshihito Yamada

Noriyuki Nakamura

Hisakazu Yoshino

Ren Arita

Yoichi Suzuki

Kazutoshi Takagi

Tomoya Nomura

Kazuyuki Sasaki

Takuya Kosaka

Shiro Takizawa

Akinobu Teramoto

Nobuaki Kitajima

Yoshihiko Hanamura

Suminosuke Kawase

Tomoyuki Suwa

Yoshinobu Shiba

Yoshihisa Uchiumi

In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential.

Active gas generation apparatus

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

Electric discharge generator and power supply device of electric discharge generator

A gas ejector of a gas supply apparatus includes a nozzle portion. The opening of a first-stage restricting cylinder constituting the nozzle portion has a circular cross-sectional shape with a diameter r. A second-stage restricting cylinder is continuously formed with the first-stage restricting cylinder along a Z direction. The opening of the second-stage restricting cylinder has a circular cross-sectional shape with a diameter r, and supplies a source gas supplied from the first-stage restricting cylinder to a low-vacuum processing chamber below. At this time, the diameter ris set to satisfy 'r&#x3e;r

Gas supply apparatus

In the present invention, a gas passing groove, a high-voltage electrode groove and a ground electrode groove formed in an electrode unit base are each spiral in plan view. A high-voltage electrode is embedded in the high-voltage electrode grove, and a ground electrode is embedded in the ground electrode groove. The high-voltage electrode and the ground electrode are arranged on sides of opposite side surfaces of the gas passing groove in the electrode unit base to oppose each other with a portion of the electrode unit base and the gas passing groove therebetween, and are spiral in plan view along with the gas passing groove.

Active gas generation apparatus and deposition processing apparatus

The present invention has features (1) to (3). The feature (1) is that 'an active gas generation electrode group is formed in such a manner that a ground side electrode component supports a high-voltage side electrode component'. The feature (2) is that 'stepped parts are provided in a discharge space outside region of a dielectric electrode in the high-voltage side electrode component, and project downward, and by a formation height of these stepped parts, the gap length of a discharge space is defined'. The feature (3) is that &#x201c;the high-voltage side electrode component and the ground side electrode component are formed to have the thickness of a discharge space formation region relatively thin and the thickness of a discharge space outside region relatively thick&#x201d;.

A gas jetting apparatus capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus includes a gas jetting cell unit for jetting a gas toward a treatment-target object. The gas jetting cell unit includes a first cone-shaped member and a second cone-shaped member. A gap is formed between a side surface of a first cone shape and a side surface of the second cone-shaped member. Apex sides of the cone-shaped members face the treatment-target object.

Gas jetting apparatus

In an active gas generating apparatus, a power feeder is provided above metal electrodes in an integrated high-voltage electrode unit. When seen in plan view, the power feeder has a shape that entirely covers the metal electrodes in the integrated high-voltage electrode unit. Each of power feeding units is provided below the metal electrodes in an integrated ground electrode unit. When seen in plan view, each of the power feeding units has a shape that entirely covers the metal electrodes of the integrated ground electrode unit.

Active gas generating apparatus

A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.

Method of forming nitride film

With respect to a dielectric electrode, gas-jetting holes and gas-jetting holes formed in two rows along the X direction are provided as three or more gas-jetting holes along the X direction in a central region. By providing a difference in the X direction between the position where the gas-jetting hole is formed and the position where the gas-jetting hole is formed, the gas-jetting holes and the gas-jetting holes disposed in two rows are provided such that gas-jetting holes and gas-jetting holes are alternately disposed along the X direction.

Active gas-generating device and film formation apparatus

An active gas generator that generates active gas by activating supplied material gas through discharge in a discharge space formed between a high-voltage side electrode component and a ground side electrode component of an active gas generation electrode group. A combined structure of covers completely separates the discharge space from an alternating-current voltage application space, and includes, independently from the alternating-current voltage application space, a material gas flow path for a material gas supply path, through which externally supplied material gas is guided to the discharge space. A housing contact space formed between a metal housing and each of the covers and an electrode component installation table is completely separated from the alternating-current voltage application space and the discharge space.

Active gas generation apparatus including a metal housing, first and second auxiliary members, and a housing contact

In an activated gas generation apparatus, metal electrodes are formed on a bottom surface of a dielectric electrode, and are disposed so as to face each other with a central region of the dielectric electrode interposed therebetween in plan view. The metal electrodes face each other along the Y direction. A wedge-shaped stepped part is provided so as to protrude upward in the central region on an upper surface of the dielectric electrode. The wedge-shaped stepped part is formed so as to have a shorter formation width in the Y direction as approaching each of a plurality of gas spray holes in plan view.

Activated gas generation apparatus and film-formation treatment apparatus

The gas jetting apparatus according to the present invention includes a gas jetting cell unit for rectifying a gas and jetting the rectified gas into the film formation apparatus. The gas jetting cell unit has a fan shape internally formed with a gap serving as a gas route. A gas in a gas dispersion supply unit enters from a wider-width side of the fan shape into the gap, and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus.

Gas jetting apparatus for film formation apparatus

In a radical gas generation system according to the present invention, a process chamber apparatus includes a table that causes a target object to rotate. A radical gas generator includes a plurality of discharge cells. Each of the plurality of discharge cells includes an opening. The opening is connected to the inside of the process chamber apparatus and faces the target object. Through the opening, a radical gas is output. Of the plurality of discharge cells, a discharge cell located farther from a center position of the rotation of the target object in a plan view includes a larger facing surface area that is a region in which a first electrode member and a second electrode member face each other.

Radical gas generation system

An activated gas generation apparatus includes a gas jet flow straightener below an activated gas generating electrode group and a nozzle constituent part. The gas jet flow straightener receives a plurality of nozzle passing activated gases as a whole at an inlet part of a gas flow-straightening passage. The gas flow-straightening passage is formed so that the outlet opening area of an outlet part is set to be narrower than the inlet opening area of the inlet part, and the cylindrical gas jet of each of the plurality of nozzle passing activated gases is converted into a linear flow-straightened activated gas by the flow-straightening action of the gas flow-straightening passage.

Activated gas generation apparatus

In an ozone generation apparatus, a discharge cell includes a first electrode part, a second electrode part, and a dielectric partition plate. The first electrode part and the second electrode part face each other, and the dielectric partition plate is provided between the first and second electrode parts.

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Tokyo, Japan

Shinichi Nishimura