Renesas Technology Corp.

Hitachi, Ltd.

Renesas Electronics Corporation

Shinichi Nakabayashi

Hirofumi Tsuchiyama

Toshiyuki Arai

Ryousei Kawai

Fumiyuki Kanai

Hisahiko Abe

Yukio Kenbo

Yoshiteru Katsumura

Katsuhiro Ota

A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Fabrication method of semiconductor integrated circuit device

A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the water, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edges of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.

Fabrication method for semiconductor integrated circuit device

In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process. The method comprises: forming an insulating film on main surfaces of a plurality of first wafers which flow through a mass-production process; preparing a dummy wafer for monitoring, on which a silicon-oxide-based insulating film is formed; performing chemical mechanical polishing on the insulating films respectively formed on main surfaces of the plurality of first wafers and the dummy wafer; performing etching on the insulating film of the dummy wafer with use of a solution containing hydrofluoric acid, after the step of performing the chemical mechanical polishing; and measuring a number of scratches on the insulating film of the dummy wafer subjected to the etching.

Semiconductor integrated circuit device manufacturing method including chemical mechanical polishing, and detection and evaluation of microscratches caused thereby

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Hitachinaka, Japan

Shinichi Nakabayashi