Nichia Corporation

Nichia Chemical Industries, Limited

Shinichi Nagahama

Shuji Nakamura

Masahiko Sano

Naruhito Iwasa

Masayuki Senoh

Atsutomo Hama

Tomoya Yanamoto

Kazuma Kozuru

Yukihiro Hayashi

Keiji Sakamoto

Yoshinori Murazaki

Tokuya Kozaki

Takafumi Sugiyama

Masashi Yamamoto

Hiroyuki Kiyoku

Daisuke Morita

Hiroto Tamaki

Kunihiro Izuno

Junji Takeichi

Tomotaka Honda

Kouki Matsumoto

Tomohisa Kishimoto

Naoto Morizumi

A light emitting device includes first and second semiconductor laser elements, a base, a surrounding part, a wavelength converting member, and first and second wiring parts. The first laser element, the converting member and the second laser element are arranged in order in a first direction. At least one of the first and second laser elements is disposed between the first and second wiring parts in a second direction perpendicular to the first direction. An outermost periphery of the converting member is between a first imaginary line and a second imaginary line in the top view. The first and second imaginary lines are both parallel to the second direction. The first imaginary line passes through an outermost periphery in the first direction of the second laser element and the second imaginary line passes through an outermost periphery in a direction opposite to the first direction of the first laser element.

Light emitting device

A light emitting device includes a base; a plurality of semiconductor laser elements disposed on the base and configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member disposed on the base and configured to reflect light from the semiconductor laser elements; a surrounding part disposed on the base and surrounding the semiconductor laser elements and the reflecting member; a wiring part disposed on the base so as to extend to a location outside of the surrounding part; a radiating body disposed on the surrounding part and having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.

A light emitting device includes a base; a plurality of semiconductor laser elements that are disposed on the base and that are configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member that is disposed on the base and configured to reflect light from the plurality of semiconductor laser elements; a surrounding part that is disposed on the base and that surrounds the plurality of semiconductor laser elements and the reflecting member; a wiring part that is disposed on the base so as to extend to a location outside of the surrounding part, the wiring part being electrically connected to the plurality of semiconductor laser elements; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.

A light emitting device includes: a base; at least one semiconductor laser element disposed on the base and configured to emit light laterally; a reflecting member that is disposed on the base; a surrounding part that is disposed on the base and that surrounds the at least one semiconductor laser element and the reflecting member; a wiring part that is electrically connected to the at least one semiconductor laser element and that is disposed on an upper surface of the base so as to extend laterally to a location on the upper surface of the base that is laterally outside of the surrounding part; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body.

Provided is a high-emission light source device which is capable of obtaining a desired color tone of red light and can be mounted on a small projector. A light source device includes a first light source for emitting a red light, a second light source for emitting a light different from the red light, a fluorescent member for emitting a light containing a red light component and a light component other than the red light component upon receiving the light emitted from the second light source, and a filter for transmitting or reflecting the red light component of the light emitted from the fluorescent member.

Light source device

A light emitting device, comprises: a light source that emits excitation light; a light guide that propagates the excitation light, and in which the refractive index of the center part (core) of a cross section is higher than the refractive index of the peripheral part (cladding); a wavelength conversion member that absorbs the excitation light propagated by the light guide and converts the wavelength thereof, and releases light of a predetermined wavelength band; and a shielding member that blocks the wavelength of at least part of the excitation light and the light emitted from the wavelength conversion member.

In a semiconductor light-emitting device, light from a laser diode is output to the outside after the luminance of the light being enhanced. It includes a support body provided with lead terminals, one or more laser diodes mounted on the support body, a cylindrical reflector fixed to the support body to surround the laser diode(s) and provided with a light reflection surface formed on an inner surface thereof, and a cap placed to cover an opening distal end face of the reflector and held at an opening distal end part of the reflector, the cap being provided at a central part thereof with a solid fluorescent member including a fluorescent substance that is excited by the light from the laser diode and emits light different in colors from light emitted by the laser diode.

Light-emitting device

A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor light-emitting devices

A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor

A light emitting device includes an excitation light source that emits excitation light, a wavelength conversion member, a light guide, and a light guide distal end member. The wavelength conversion member absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band. The light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding) guides the excitation light emitted from the excitation light source to the wavelength conversion member. The light guide distal end member supports a distal end of the light guide on the wavelength conversion member side. The light guide distal end member is formed from a material that reflects the excitation light and/or the light that has undergone wavelength conversion.

A substratefor growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layersto, an active layerand p-type nitride semiconductor layerstoare laminated to form a stack of nitride semiconductor on the first face of the substrate. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substratefor growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layerand the second bonding layerare faced with each other and, then, pressed with heat to bond together. After that, the substratefor growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

Nitride semiconductor device comprising bonded substrate and fabrication method of the same

A light emitting device, comprises: an excitation light source that emits excitation light; a wavelength conversion member that absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band; a light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding), and which guides the light emitted from the wavelength conversion member to the outside; and wherein the wavelength conversion member is produced by laminating a plurality of layers that wavelength-convert different wavelengths of light.

Superlattice nitride semiconductor LD device

A light emitting device includes a first unit having a first excitation light source including a laser element emitting blue wavelength band excitation light, and a first wavelength converting member including at least one type of fluorescent material and which absorbs at least a portion of a first excitation light, converts the wavelength, and releases light with a wavelength longer than the first excitation light, and a second unit having a second excitation light source including a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light, and a second wavelength converting member which includes at least one type of fluorescent material and which absorbs at least a portion of a second excitation light, converts the wavelength, and releases light with a wavelength longer than the second excitation light. The first unit and the second unit are combined using a bundle fiber.

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Tokushima, Japan

Shinichi Nagahama