Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi Ulsi Systems Co., Ltd.

Other

Hitachi, Ltd. & Engineering Corp.

Hitachi Vlsi

Shinichi Minami

Yoshiaki Kamigaki

Kozo Katayama

Yuji Yatsuda

Takaaki Hagiwara

Toshihiro Tanaka

Mitsuru Hiraki

Nozomu Matsuzaki

Yutaka Shinagawa

Masamichi Fujito

Takashi Yamaki

Kazufumi Suzukawa

Hiroyuki Tanikawa

Yukiko Umemoto

Ryuji Kondo

Yokichi Itoh

Masataka Kato

Shoji Shukuri

Masatada Horiuchi

Hideki Yasuoka

Fukuo Owada

Fukuo Oowada

Xiaudong Fang

Shinichiro Kimura

Yoshifumi Kawamoto

Toru Kaga

Takanori Yamazoe

Masaaki Terasawa

Kazunori Furusawa

Eiji Takeda

Kazuhiko Sagara

Hiroshi Yoshigi

Dai Hisamoto

Takeo Kanai

Hidefumi Mukohda

Yasunori Ikeda

A semiconductor device includes a plurality of nonvolatile memory cells (). Each of the nonvolatile memory cells comprises a MOS type first transistor section () used for information storage, and a MOS type second transistor section () which selects the first transistor section. The second transistor section has a bit line electrode () connected to a bit line, and a control gate electrode () connected to a control gate control line. The first transistor section has a source line electrode () connected to a source line, a memory gate electrode () connected to a memory gate control line, and a charge storage region () disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc&#x3c;tm.

Semiconductor device

A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.

Semiconductor integrated circuit device and a method of manufacturing the same

A multi-storage nonvolatile memory of high density, high speed and high reliability has a memory transistor and switch transistors disposed on both the sides of the memory transistor. The memory transistor includes a gate insulating film having discrete traps and a memory gate electrode, whereas the switch transistors include switch gate electrodes. The gate insulating film has the discrete traps for storing information charge, can locally inject carriers, and one memory cell constitutes a multi-storage cell for storing at least information of 2 bits. The switch transistors having the switch gate electrodes realize source side injection. The memory transistor is fommed together with the switch transistors in self-aligned diffusion. The memory gate electrode of the memory transistor is connected to a word line so as to perform word-line erase.

Semiconductor integrated circuit having discrete trap type memory cells

A nonvolatile memory device has a plurality of nonvolatile memory cells in which a memory gate electrode is formed over a first semiconductor region with a gate insulating film and a gate nitride film interposed therebetween. First and second switch gate electrodes, and first and second signal electrodes used as source/drain electrodes are formed on both sides of the memory gate electrode. Electrons are injected into the gate nitride film from the source side to store information in the memory cells. The memory gate electrode and the switch gate electrodes extend in the same direction. The application of a high electric field to a memory cell which is not selected for writing can be avoided owing to the switch gate electrodes being held in a cut-off state.

Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)

A manufacturing technique for a zener diode which includes forming a first semiconductor region in a region such as a well region at a primary face of a semiconductor substrate and then forming a second semiconductor region of opposite conductivity type thereover. The second semiconductor region covers an area greater than the underlying first semiconductor region. The method further calls for forming an insulating film on the primary face of the substrate followed by the forming connection holes in the insulating film to expose an upper part of the second semiconductor region located outside the area covered by the junction affected between the first and second semiconductor regions. This is followed by the formation of a wire at the upper part of the insulating film in which an electrical connection is affected between the wire and the second semiconductor region through the plural connection holes which are distributively arranged.

Method of manufacturing a semiconductor integrated circuit device

Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed

Method of manufacturing an integrated circuit device including forming an oxidation resistant film over an isolation region and subsequently forming a gate insulating film of a misfet

Growing community of inventors

Kodaira, Japan

Shinichi Minami