Toyoda Gosei Co., Ltd.

Meijo University

Toyoda Gosei C0., Ltd.

Shinichi Matsui

Yoshiki Saito

Hironao Shinohara

Daisuke Shinoda

Yasuhiro Takenaka

Hisayuki Miki

Tetsuya Takeuchi

Takashi Hodota

Kengo Nagata

Shinya Boyama

Koichi Mizutani

Hiroaki Makino

Hiroshi Miwa

Hisanori Ishiguro

Hideki Omoya

Cover for light emitting diode

A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a Natmosphere at not less than 650° C. or in a N+Oatmosphere at not less than 500° C.

Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element

A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlGaN (0.1&#x2264;x&#x2264;1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Light emitting element including contact electrode with laminate structure, and method of manufacturing the same

A light-emitting element includes an n-type semiconductor layer mainly including AlGaN (0.5&#x2264;x&#x2264;1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Light-emitting element

Growing community of inventors

Kiyosu, Japan

Shinichi Matsui