Mitsubishi Rayon Company, Limited

Mitsubishi Chemical Corporation

Shinichi Maeda

Atsushi Yasuda

Takashi Saitoh

Daisuke Matsumoto

Keisuke Katou

Fumino Momose

Tomoya Oshikiri

Yoshikazu Saitoh

Satoshi Sakuma

Masashi Uzawa

Shigeru Shimizu

Ryuichi Ansai

Masashi Serizawa

Seiji Tsuchiya

Nobuhisa Yada

Keisuke Kato

A method for producing a polymer of the present invention includes the following steps (a) and (b):

Method for producing polymer, and polymer

To provide an alcohol compound containing fewer impurities at a high yield by conducting the following steps: a hydroboration process in which a reaction mixture is obtained by reacting in a solvent a compound represented by formula (C) and a boron agent selected from a group of diborane and borane complexes; and an oxidation process in which the pH of the reaction mixture is set at 0.5 to 4, which is conducted after treating the reaction mixture with hydrogen peroxide. In the formula, Ato Aare each independently a hydrogen atom, methyl group or ethyl group, and X is an oxygen atom, sulfur atom, methylene group or ethylene group. 

Alcohol compound and method for producing same, method for producing lactone compound, (meth)acrylate ester and method for producing same, polymer and method for producing same, and resist composition and method for producing substrate using same

Provided is a resist copolymer which has favorable sensitivity, enables a resist pattern to be formed to have a favorable shape, has favorable dry etching resistance when a dry etching is carried out using the resist pattern as a mask, and suppresses the surface roughness of a pattern formed by carrying out a dry etching process to a substrate. A resist copolymer including a constituent unit (1) based on a (meth)acrylic acid ester derivative having a cyclic hydrocarbon group such as an adamantane ring and two or more cyano groups bonded to the cyclic hydrocarbon group, a constituent unit (2) having a lactone backbone and a cross-linking cyclic structure, and a constituent unit (3) having an acid leaving group.

Resist copolymer and resist composition

A copolymer obtained by polymerizing two or more types of monomers, wherein among fractions obtained by dividing an eluate showing peaks relative to the copolymer, in an elution curve obtained by gel permeation chromatography (GPC), into eight fractions in order of fractionation, such that each fraction has the same volume, a difference between a monomer composition ratio of a copolymer contained in a first eluted fraction and a monomer composition ratio of all copolymers is &#x2212;3 mol % to +3 mol % in any of the constitutional units derived from the respective monomers.

Polymer for lithography

A method for producing a polymer is provided. The polymer improves variations in the content ratio and molecular weights of a copolymer's constitutional units, solvent solubility, and the sensitivity of a resist composition using such a polymer. The method includes polymerizing two or more monomers while adding with a polymerization initiator to obtain the polymer, feeding a first solution containing first composition monomers in an initial polymerization stage, and starting dropwise addition of a second solution containing second composition monomers after or simultaneously with the feeding of the first solution. The second composition is equal to a target composition ratio of the polymer to be obtained. The first composition is calculated in advance based on a target composition ratio and the reactivity of the monomers. The above dropping rate is set to high.

Method for producing polymer, polymer for lithography, resist composition, and method for producing substrate

The present invention provides a method for evaluating lithographic characteristics of a lithographic composition containing a copolymer for lithography without actually preparing the composition. The method comprises the steps of: dissolving the copolymer for lithography in a solvent to prepare a test solution; separating a gel-like substance from the test solution; determining a rate of change of a composition ratio, wherein the rate of change of the composition ratio rate refers to a ratio of a difference obtained by subtracting a composition ratio of constitutional units in the copolymer for lithography from a composition ratio of constitutional units in a gel-like substance to the composition ratio of the constitutional units in the copolymer for lithography.

Copolymer for lithography and method for evaluating the same

The present invention provides an industrial method that allows to produce an indole derivative trimer with high purity in mass, as well as novel indole derivative trimers obtainable by the method, having high conductivity, high oxidation-reduction potential, high oxidation-reduction capacity, and the excellent cycle characteristics. The present invention relates to a method of producing an indole derivative trimer comprising the step of oxidizing an indole derivative in a reaction solution containing an organic solvent and to the novel trimers produced by the method.

Method for producing trimer of indole derivative, and trimer of indole derivative and laminated structure thereof

The present invention provides an industrial method that allows to produce an indole derivative trimer with high purity in mass, as well as novel indole derivative trimers obtainable by the method, having high conductivity, high oxidation&#x2014;reduction potential, high oxidation&#x2014;reduction capacity, and the excellent cycle characteristics. The present invention relates to a method of producing an indole derivative trimer comprising the step of oxidizing an indole derivative in a reaction solution containing an organic solvent and to the novel trimers produced by the method.

A method for producing a soluble conductive polymer having acidic groups, which comprises subjecting to electrolytic polymerization (a) at least one compound selected from the group consisting of acidic group-substituted anilines, acidic group-substituted pyrroles, acidic group-substituted thiophenes, acidic group-substituted furans, acidic group-substituted selenophenes, acidic group-substituted tellurophenes, acidic group-substituted isothianaphthenes, acidic group-substituted isobenzofurans, acidic group-substituted isoindolines, acidic group-substituted isobenzoselenophenes, acidic group-substituted isobenzotellurophenes, and their metal salts, ammonium salts and substituted ammonium salts in a solution containing (b) a basic compound.

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Yokohama, Japan

Shinichi Maeda