Nissan Chemical Industries Limited

Nissan Chemical Corporation

Sumitomo Electric Industries, Limited

Hokkaido University

Shinichi Maeda

Takahiro Kishioka

Go Ono

Yosuke Iinuma

Yoshiomi Hiroi

Tadayuki Isaji

Shun Sugawara

Masahiro Ueda

Taku Kato

Kohei Shimoda

Issei Okada

Naoki Otani

Takuma Nagahama

Takayoshi Kawasaki

Akira Miura

Kiyoharu Tadanaga

Provided is a charge-transporting composition that contains: a charge-transporting substance comprising a polythiophene derivative represented by formula (1); a fluorine-based surfactant; metal oxide nanoparticles; and a solvent. (Rand Rare each independently a hydrogen atom, an alkoxy group having 1-40 carbon atoms, —O—[Z—O]—R, a sulfonic acid group, or the like, or Rand Rbond to each other to form —O—Y—O—. Y is an alkylene group having 1-40 carbon atoms, which may contain an ether bond and which may be substituted with a sulfonic acid group. Z is an alkylene group having 1-40 carbon atoms, which may be substituted with a halogen atom. p is 1 or more, and Ris a hydrogen atom, an alkyl group having a 1-40 carbon atoms, or the like.)

Charge-transporting composition

An alkali metal amide is dissolved in a cyclic alkylene urea represented by the formula (1) (wherein each of Rand Rrepresents a C1 to C3 alkyl group, and Rrepresents a C1 to C4 alkylene group).

Liquid for nitriding treatment, nitrided metal oxide manufacturing method, and nitrided indium oxide film

The present invention provides a composition for forming a polyvinylidene fluoride film, which contains: a polyvinylidene fluoride; at least one surfactant that is selected from among sulfuric acid-based surfactants, sulfonic acid-based surfactants and quaternary ammonium salt type surfactants; and a solvent.

Composition for forming polyvinylidene fluoride film

Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.

Amorphous metal oxide semiconductor layer and semiconductor device

This hole collection layer composition for an organic photoelectric conversion elements comprises: a charge-transporting substance formed of a polyaniline derivative represented by formula (1); fluorochemical surfactant; metal oxide nanoparticles; and a solvent. The hole collection layer composition provides a thin film having excellent adhesiveness to an active layer of an organic photoelectric conversion element.  {R-Rare each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a sulfonic acid group, a C-Calkoxy group, a C-Cthioalkoxy group, a C-Calkyl group, etc. Meanwhile, one of R-Ris a sulfonic acid group and at least one of the remaining R-Ris a C-Calkoxy group, a C-Cthioalkoxy group, a C-Calkyl group, etc., and m and n are numbers that satisfy 0&#x2264;m&#x2264;1, 0&#x2264;n&#x2264;1, and m+n=1.}

Hole collection layer composition for organic photoelectric conversion element

Provided is a production method for a carbon-based light-emitting material that generates light having a wavelength of 500 to 700 nm when exposed to excitation light having a wavelength of 300 to 600 nm. The production method comprises a step for mixing and heating a starting material containing ascorbic acid, an acid catalyst containing an inorganic acid, and a solvent.

Production method for carbon-based light-emitting material

The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.

Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device

To provide a coating fluid for a gate insulating film, which can be baked at a low temperature of at most 180C; a gate insulating film having excellent solvent resistance and further having good characteristics in e.g. specific resistance or semiconductor mobility; and an organic transistor employing the gate insulating film. A coating fluid for a gate insulating film, which comprises a polyimide obtainable by cyclodehydration of a polyamic acid having repeating units of a specific structure, a gate insulating film employing the coating fluid, and the organic transistor employing the gate insulating film.

Coating liquid for gate insulating film, gate insulating film and organic transistor

The invention provides a metal oxide semiconductor layer forming composition containing a solvent represented by formula [1]: (wherein Rrepresents a C2 to C3 linear or branched alkylene group, and Rrepresents a C1 to C3 linear or branched alkyl group) and an inorganic metal salt.

Metal oxide semiconductor layer forming composition, and method for producing metal oxide semiconductor layer using same

There is provided a polyimide precursor which can alter the hydrophilicity/hydrophobicity of the surface of a cured film formed readily even by a low level of ultraviolet ray irradiation; and a polyimide produced from the polyimide precursor. The polyimide precursor having a structure represented by the following formula (1): where A represents a tetravalent organic group; B represents a bivalent organic group having a thiol ester bond in its main chain; Rand Rindependently represent a hydrogen atom or a univalent organic group; and n represents a natural number.

Polyimide precursor, polyimide, and coating solution for under layer film for image formation

A charge-transporting varnish containing either a charge-transporting substance consisting of a charge-transporting oligoaniline or a charge-transporting organic material consisting of the charge-transporting substance and a charge-accepting dopant and at least one polymer selected from among polyimides and polyimide precursors; and charge-transporting thin films and organic EL devices, made by using the varnish. The varnish can give thin films which little suffer from defects and have high uniformity and flatness and excellent mechanical strengths, heat resistance, and transparency. In particular, the varnish realizes excellent EL characteristics such as low driving voltage, high emission efficiency, and long service life, when used in organic EL devices.

Charge-transporting varnish and organic electro-luminescent devices made by using the same

It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor.

Forming agent for gate insulating film of thin film transistor

There is provided a polyimide precursor which can alter the hydrophilicity/hydrophobicity of the surface of a cured film formed readily even by a low level of ultraviolet ray irradiation; and a polyimide produced from the polyimide precursor. The polyimide precursor having a structure represented by the following formula (1): 

There is provided a novel composition for forming a gate insulating film taking into consideration also electrical characteristics after other processes such as wiring by irradiation with an ultraviolet ray and the like during the production of an organic transistor using a gate insulating film. A composition for forming a gate insulating film for a thin-film transistor comprising: a component (i): an oligomer compound or a polymer compound containing a repeating unit having a structure in which a nitrogen atom of a triazine-trione ring is bonded to a nitrogen atom of another triazine-trione ring through a hydroxyalkylene group; and a component (ii): a compound having two or more blocked isocyanate groups in one molecule thereof.

Composition for forming gate insulating film for thin-film transistor

There is provided a novel gate insulating film forming material in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor.

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Funabashi, Japan

Shinichi Maeda