Panasonic Intellectual Property Management Co., Ltd.

Shinichi Machida

Sanshiro Shishido

Takeyoshi Tokuhara

Masumi Izuchi

Manabu Nakata

Masaaki Yanagida

Yasunori Inoue

Masashi Murakami

Katsuya Nozawa

Yasuo Miyake

Takeo Azuma

Satoshi Sato

Kunio Nobori

Nozomu Matsukawa

Nobuhiko Wakai

Yuuko Tomekawa

Takahiro Koyanagi

Mitsuru Harada

A control method for an imaging element is a control method for an imaging element including a photoelectric converter and a peripheral circuit connected to the photoelectric converter. The control method for the imaging element includes receiving a predetermined input signal, and controlling the imaging element by switching between a normal imaging mode and a low power consumption mode based on the predetermined input signal. In the normal imaging mode, the imaging element is controlled to apply first voltage between the first electrode and the second electrode. In the low power consumption mode, the imaging element is controlled to apply second voltage between the first electrode and the second electrode and to stop part of operation of the peripheral circuit, the second voltage being larger than 0 V and smaller than the first voltage.

Imaging element control method and camera system having low power consumption mode

An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

Organic device and method for producing organic device

An imaging device includes: a semiconductor substrate; a plurality of pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the plurality of pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the plurality of pixel electrodes; and at least one first light-shielding body located in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer contains semiconductor quantum dots that absorb light in a first wavelength range and a coating material that covers the semiconductor quantum dots, the coating material absorbing light in a second wavelength range, the coating material emitting fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

Imaging device

An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.

A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

Light sensor including long-pass filter and light detection system

A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.

Photoelectric conversion element, electronic device, and light-emitting device

An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.

Optical sensor

An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 &#x3bc;m, and the material has a quantum nanostructure.

Imaging device and imaging system

An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and voltage supply circuit

An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 &#x3bc;m or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 &#x3bc;m or longer and shorter than 1.1 &#x3bc;m is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 &#x3bc;m or longer.

An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

Imaging device including at least one unit pixel cell and voltage application circuit

An image generation device includes: a voltage generator that generates a plurality of voltages each having a different voltage value; an image capturer that includes an organic photoconductive film, and performs imaging every time each of the plurality of voltages is applied; a luminance data obtainer that obtains a plurality of luminance data items corresponding to the plurality of voltages applied, each of the plurality of luminance data items being obtained from the imaging performed by the image capturer; and a color image generator that generates a color image based on the plurality of luminance data items.

Image generation device and image generation method

An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and computing circuit

An imaging device having pixels, each pixel including: a photoelectric conversion unit including a first electrode, a second electrode, a photoelectric conversion layer between the first and second electrodes, and a hole-blocking layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion unit is applied with a voltage between the first electrode and the second electrode. The photoelectric conversion unit has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. The range from the first voltage to the second voltage includes 0V, and a difference between the first voltage and the second voltage is 0.5 V or more.

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Osaka, Japan

Shinichi Machida