Tokyo Electron Limited

Tokyo Electron Limi Ted

Shinichi Kozuka

Takao Funakubo

Ryosuke Niitsuma

Hiroshi Tsujimoto

Kumiko Ono

Wataru Ozawa

Hirofumi Haga

Akihiro Sakamoto

Naoto Umehara

Naoki Taniguchi

Manabu Ishikawa

Masaru Nishino

Tsutomu Ito

Yuta Seya

Aritoshi Mitani

A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

Plasma processing apparatus and plasma processing method

Electrode plate for plasma processing apparatus

A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.

Plasma etching method

A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.

Plasma processing method and plasma processing apparatus

A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

Method of making semiconductor device

Growing community of inventors

Miyagi, Japan

Shinichi Kozuka