Panasonic Intellectual Property Management Co., Ltd.

Shinichi Kishimoto

Takeshi Mori

Hideki Ueda

Takeshi Okada

Koji Sakai

Hiroyuki Aizawa

Hitoshi Yoshida

Jun Ogihara

Katsumi Kakimoto

Takafumi Okudo

Nobuyuki Ibara

Kazuo Goda

Hiroki Yoshino

Takanori Aoyagi

Masahiko Ohbayashi

Takumi Taura

Masatoshi Nomura

Chunzhi Dong

An inertial sensor includes: a plurality of inertial force detection elements each configured to output an output signal corresponding to a detected inertial force; and a processor configured to execute processing relating to the output signal from each of the plurality of inertial force detection elements. The plurality of inertial force detection elements includes: a plurality of main inertial force detection elements configured to detect inertial forces of a plurality of first predetermined axes orthogonal to each other; and a sub-inertial force detection element configured to detect an inertial force of a second predetermined axis which intersects the plurality of first predetermined axes such that the second predetermined axis is orthogonal to none of the plurality of first predetermined axes.

Inertial sensor

A physical quantity sensor includes a substrate, an anchor portion, a surrounding portion, a detecting element, a moving portion, and a beam portion. The anchor portion is formed on the same side as a principal surface of the substrate and fixed to the substrate. The surrounding portion is formed on the same side as the principal surface of the substrate and surrounds the anchor portion. The detecting element detects a physical quantity as a target of detection. The moving portion is provided with at least a part of the detecting element, formed on the same side as the principal surface of the substrate, and connected to the surrounding portion. The beam portion is formed on the same side as the principal surface of the substrate and connects the anchor portion and the surrounding portion together.

Physical quantity sensor

A component sensor detects a fluid component with improved accuracy. The component sensor includes tube () including tube side () that permits inflow of fluid (), substrate () provided to tube (), first protrusion () provided at one end of substrate (), second protrusion () provided at another end of substrate (), light emitter () that emits infrared light () toward first protrusion (), and light receiver () that receives infrared light (). Infrared light () entering substrate () through first protrusion () experiences total reflection inside substrate () and exits through second protrusion () to head for light receiver (). Tube side () includes two through holes () that each extend between an interior and an exterior of tube (). Substrate () is inserted into through holes () with a central part of substrate () being inside tube () and with the one end and the other end of substrate () that are respectively provided with first protrusion () and second protrusion () being outside tube ().

Component sensor

A MEMS device includes a movable section, a frame, a beam, and an electrode substrate. The frame surrounds a surrounding of the movable section. The beam extends from at least a part of the frame, and is connected to the movable section. The electrode substrate includes a fixed electrode, an extended electrode, and a substrate section. The fixed electrode is formed on the electrode substrate in at least a part of a region facing a swing section. The extended electrode is connected to the fixed electrode, and is formed on the electrode substrate in at least a part of a region facing the shaft.

MEMS device

An electrostatic capacitance sensorincludes a semiconductor substrate. A first fixing plateis joined to a one-side surfaceof the semiconductor substrate, and a second fixing plateis joined to other-side surfaceof the semiconductor substrate, whereby a space portion S is formed. Then, static electricity suppressing meansfor suppressing static electricity from being generated in the space portion S is provided in the electrostatic capacitance sensor

Electrostatic capacitance sensor

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Osaka, Japan

Shinichi Kishimoto