Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Shinichi Kinouchi

Fusaoki Uchikawa

Shigeru Matsuno

Hisao Watarai

Hiroshi Nakatake

Takeshi Tanaka

Akihiko Furukawa

Masayuki Imaizumi

Hirofumi Fujioka

Yasushi Nakayama

Shinya Yano

Takeshi Oi

Takeshi Horiguchi

Satoshi Ishibashi

Osamu Usui

Toshiyuki Kikunaga

Hirotaka Muto

Yuji Ebiike

Kosuke Nakano

Tatsuya Kitamura

Takeshi Ohi

Takumi Kikuchi

Toshio Umemura

Kunihiko Egawa

Shinsuke Idenoue

Ayumi Nozaki

Shin Utsunomiya

Mitsunobu Wakata

In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

Semiconductor module with temperature detecting element

A power semiconductor module includes an element pair formed by connecting, in anti-parallel to each other, an IGBT and an FWD group in which an FWD, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FED, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series and an element pair formed by connecting, in anti-parallel to each other, an IGBT and an FWD group in which a FWD, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FWD, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series. The element pairs are connected in parallel.

Power semiconductor module, power converting apparatus, and railway car

The invention provides a drive control device that comprises: inverters that are connected to a motor; a variable resistive element that is connected between the motor and each of the inverters; a current/voltage detection device connected between the motor and each of the inverters; and a controller that, when detecting a fault of an inverter that drives the motor based on a detection signal from the current/voltage detection device, gradually increases a resistance value of a variable resistive element provided between the faulty inverter and the motor at a velocity of a resistance variation such that a surge voltage has a voltage value for which the variable resistive element and the motor are not damaged, and executes drive control of the motor by a normal inverter other than the faulty inverter.

Drive control device and drive control method

A semiconductor device capable of rapidly and accurately sensing the information regarding the temperature of a semiconductor transistor contained therein. A MOSFET includes a plurality of cells, and includes a main cell group including a cell for supplying a current to a load among the plurality of cells, and a sense cell group including a cell for sensing temperature information regarding the temperature of the MOSFET thereamong. The main cell group and the sense cell group have different temperature characteristics showing changes in electrical characteristics to changes in temperature. A temperature sensing circuit senses the temperature of the MOSFET based on, for example, a value of a main current flowing through the main cell group and a value of a sense current flowing through the sense cell group.

Semiconductor device

A gate driving circuit for driving a voltage-driven switching device is provided with a current limiting circuit for limiting a gate current ig that flows into a gate terminal through a gate resistor at turn-on to a current limit value IL which defines an upper limit value. The current limit value IL is set at a value which is larger than a gate current value Iat turn-on of the switching device during a period when the Miller effect occurs but is smaller than a gate current value Iat a point in time when a main current begins to flow at turn-on in a case where the gate current ig is not limited by the current limiting circuit. This arrangement makes a variation in a collector current of the switching device moderate at turn-on thereof when the collector current begins to flow, thereby reducing high-frequency noise.

Gate driving circuit

A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate 'ON' command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an 'ON' signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off.

Drive circuit for semiconductor element

A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.

Capacitor

An object is to obtain long-term reliability of an electric connection in a power semiconductor module. In a power semiconductor module, the main circuit interconnection directly connected to a power semiconductor chip (,) is formed of a busbar (,) and the power semiconductor chip (,) and the busbar electrode (,) of the busbar (,) are electrically connected through a conductive resin (,). A member (,) having lower thermal expansion than the busbar electrode (,) is joined to the busbar electrode (,) in the part adjacent to said power semiconductor chip (,).

Power semiconductor module

A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.

Capacitor including barium strontium titanate film

The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

CVD method for forming oxide-system dielectric thin film

CVD Raw Material for oxide-system dielectric thin film and capacitor

A method for manufacturing the oxide superconductor according to the present invention comprises the steps of: mixing a starting material including Bi, Sr, Ca and Cu such that a mole ratio of Bi, Sr, Ca and Cu is 2:2+a:1+b:2+c, wherein a.gtoreq.0, b.gtoreq.0, c.gtoreq.0, and 0&lt;a+b+c&lt;3; melting the mixed material at a temperature of 900.degree. C.-1500.degree. C.; quenching rapidly the molten material; and annealing the quenched material at a partial molten temperature of 800.degree. C.-1000.degree. C. This method gives product wherein a precipitate of at least one compound in the group SrO, CuO and (Ca.sub.1-x Sr.sub.x).sub.2 CuO.sub.3 (wherein 0.gtoreq.x&lt;1) is finely dispersed in the superconducting crystal of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.y (wherein y is about 8). The precipitates act as flux pinning centers. Further, an oxide superconductor according to the present invention comprises superconducting crystal consisting of Bi, Sr, Ca and Cu oxides and separate oxide phases including Pt as a principal component being finely dispersed in the superconducting crystal. These finely dispersed oxides including Pt act as flux pinning centers.

Growing community of inventors

Tokyo, Japan

Shinichi Kinouchi