Fujitsu Corporation

Nec Corporation

Teijin Limited

Honda Giken Kogyo Kabushiki Kaisha

Nec Electronics Corporation

Yamatake Corporation

Shinichi Kawai

Shinya Watanabe

Koji Furuya

Kenji Suzuki

Shigeo Satoh

Toshio Nomura

Taketo Watanabe

Takayuki Kawamata

Ryoji Tsukamoto

Yasutaka Nakashiba

Takashi Sato

Masayuki Furumiya

Kenichi Goto

Keisuke Hatano

Nobukazu Teranishi

Hideshi Kurihara

Takao Tamura

Makoto Handa

Ichiro Murakami

Kiyokazu Ishige

Chihiro Ogawa

Masahiko Kosuge

Yasuaki Hokari

Nobuhiko Mutoh

Akira Yoshino

Michihiro Morimoto

Tatsuya Yamazaki

Tetsuo Izawa

Teiichiro Nishizaka

Setsuya Nagaya

Takafumi Kudo

Hiroshi Hatanaka

Motoko Tanaka

Mitsuru Teramoto

Takumi Hayashi

Hisashi Miyazawa

Tomokatsu Ura

Tomohiro Hamajima

Kozo Orihara

Yusuke Yamamori

Yoshio Shiiba

Kouichi Arai

Hiroshi Miyashita

Mutsuhito Ota

Isami Sakai

Seiji Ito

Shinobu Suwazono

Hiroaki Utsumi

Keng Tan

Eiji Fukazawa

A wireless communication apparatus includes an amplifying unit that amplifies an input signal that includes signals with different frequencies of a first frequency and the second frequency; a measuring unit that measures a level of inter modulation distortion generated in a signal obtained by the input signal being amplified by the amplifying unit; a determining unit that determines whether the level of the inter modulation distortion measured by the measuring unit is equal to or greater than a regulation value that is previously stored; and a control unit that decreases, when a result of the determination obtained by the determining unit indicates that the level of the inter modulation distortion is equal to or greater than the regulation value, a level of a signal input to the amplifying unit.

Wireless communication apparatus, communication control method, and computer-readable recording medium

A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate via a gate insulating film. A source region and a drain region of a first conductivity type are formed on the first side and the second side of the gate electrode, respectively, in the semiconductor substrate. A punch-through stopper region of a second conductivity type is formed in the semiconductor substrate such that the second conductivity type punch-through stopper region is located between the source region and the drain region at distances from the source region and the drain region and extends in the direction perpendicular to the principal surface of the semiconductor substrate. The concentration of an impurity element of the second conductivity type in the punch-through stopper region is set to be at least five times the substrate impurity concentration between the source region and the drain region.

Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device

A high-frequency oscillation proximity sensor with an improved detection sensitivity uses, as a detection coil, a two-thread coil formed of substantively two coil conductors joined together at their first ends to form a joint connection end and twisted together, one of the two coil conductors being used as a resonance circuit coil Land the other as a copper resistance compensation coil L, and comprises a drive circuitfor supplying a drive current to the joint connection end of the two-thread coil to thereby drive the detection coil to oscillate, a bufferfor taking out an oscillating output voltage generated at the joint connection end of the two-thread coil, and a phase shift circuitfor turning the phase of the oscillating output voltage taken out by the buffer by a predetermined angle and feeding it back to the copper resistance compensation coil to thereby negate the copper resistance of the two-thread coil. The drive circuit comprises a nonlinear amplifierfor changing the amplitude of the oscillating voltage generated at the two-thread coil in multiple stages to thereby impart a soft oscillation characteristic to a high-frequency oscillation circuit comprising the nonlinear amplifier and the two-thread coil.

High-frequency oscillation type proximity sensor

A semiconductor memory device includes a first insulating film provided on a semiconductor substrate between first and second diffusion regions, a first gate electrode provided on the first insulating film, a second insulating film provided on the semiconductor substrate between the second diffusion region and a third diffusion region, and a second gate electrode provided on the second insulating film. The first and second diffusion regions, first insulating film, and first gate electrode constitute a first memory cell, while the second and third diffusion regions, second insulating film, and second gate electrode constitute a second memory cell. The first and second gate electrodes are connected in common to form a word line electrode. The first and third diffusion regions are connected to first and second read bit lines. The second diffusion region is connected to a program and erase bit line.

Semiconductor memory device and control method and manufacturing method thereof

An aromatic polyester film, which comprises an aromatic polyester comprising 2,6-naphthalenedicarboxylic acid as the main dicarboxylic acid component and 1,3-propanediol as the main diol component and having a density of at least 1.310 g/cm . A laminated film comprising another polyester layer can be formed from this aromatic polyester film. An aromatic polyester containing a small amount of a sulfonic acid phosphonium salt used as one of the aromatic polyesters forming this laminated film is excellent in electrostatic casting properties and resistance to the contamination of an electrostatic wire, and an aromatic polyester containing an inorganic anti-fungus agent is used for antifungal application.

Trimethylene-2, 6-naphthalene dicarboxylate (co)polymer film, quaternary phosphonium sulfonate copolymer and compositions thereof

Laminate film for preventing glass from shattering

A charge transfer structure includes an insulating film on a first semiconductor region, a plurality of transfer electrodes and a signal generating circuit. The plurality of transfer electrodes are formed on the insulating film, and each of the plurality of transfer electrodes is composed of a barrier electrode and an accumulation electrode. The signal generating circuit generates first to 2N-th (N is a positive integer more than 1) pulse signals which are supplied to every 2N transfer electrodes of the plurality of transfer electrodes in an interline mode. As a result, a signal charge can be transferred for the 2N transfer electrodes at maximum during one cycle of the first to 2N-th pulse signals.

Solid state imaging apparatus with horizontal charge transfer register which can transfer signal charge faster

A biaxially oriented polyester film for thermal transfer use produced by using a polyester composed of a dicarboxylic acid component and a diol component as a constituent component characterized in that said film contains a sulfonic acid quaternary phosphonium salt having an ester-forming functional group in an amount of 0.1 to 40 mmol % based on said dicarboxylic acid component, the alternate current volume resistivity of the film is 6&times;10,&OHgr;&middot;cm or below in molten state and the endothermic subpeak temperature of the film other than the melting point and determined by DSC is between 225&deg; C. and the melting point, a laminated film produced by forming an adhesiveness improving layer on at least one surface of the biaxially oriented polyester film, and its production process.

Biaxially oriented polyester film for thermal transfer ribbon, laminated film composed thereof and its production

An image sensor includes photoelectric converting elements arranged in a column direction. Each of the converting elements generates signal charge. K transfer electrodes (k is a positive integer more than 1) are provided for each of the photoelectric converting elements in the column direction. 2k signal lines are connected to the transfer electrodes for adjacent two of said photoelectric converting elements. The 2k signal lines are used to supply driving clock signals to the transfer electrodes for the adjacent two photoelectric converting elements, respectively. As a result, the signal charges are transferred based on the driving clock signals.

Signal charge transferring method in image sensor in which clock signal phase is switched

Biaxially oriented polyester film for a membrane switch

Biaxially oriented film

Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Solid state imaging apparatus having a plurality of metal wirings for

In a solid state image sensor unit which includes a substrate having a substrate surface and a plurality of first semiconductor regions formed on the substrate surface along a predetermined direction of the substrate surface with said first semiconductor regions substantially isolated electrically from each other. The solid state image sensor unit comprises a connection member formed on the substrate surface for supplying a reference potential to the first semiconductor regions in common.

Solid state image sensor unit with wide dynamic range and high resolution

Growing community of inventors

Tokyo, Japan

Shinichi Kawai