Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Shinichi Izuo

Hajime Akiyama

Eiji Yoshikawa

Kazuhiko Tsutsumi

Yukihisa Yoshida

Nobuya Nishida

Taichi Obara

Masaki Taya

Akira Yamashita

Hiroshi Ohji

Patrick James French

Motohisa Taguchi

In a power module, a power semiconductor element is mounted on a heat dissipation substrate having a tilted part formed at an end portion thereof, a resin case is arranged so as to surround the power semiconductor element and to contact the heat dissipation substrate, and a cooling fin is arranged so as to contact a surface of the heat dissipation substrate opposite a surface of the heat dissipation substrate on which the power semiconductor element is mounted. The power module includes pressure member contacting the tilted part of the heat dissipation substrate to press the heat dissipation substrate against the cooling fin.

Power module

A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided. Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.

Semiconductor pressure sensor

A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.

Semiconductor pressure sensor and method of manufacturing semiconductor pressure sensor

A semiconductor pressure sensor comprises a silicon support substrate (), an insulating layer () formed on the silicon support substrate (), and a silicon thin plate () formed on the insulating layer (). A through-hole () extending in the thickness direction of the silicon support substrate () is formed in the silicon support substrate (). The silicon thin plate () located on an extension of the through-hole () functions as a diaphragm () that is deformed by an external pressure. The insulating layer () remains over the entire lower surface of the diaphragm (). The thickness of the insulating layer () decreases from the peripheral portion toward the central portion of the diaphragm (). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

Semiconductor pressure sensor and its fabrication method

A dielectric isolation type semiconductor device and a manufacturing method therefor achieve high dielectric resistance while preventing the dielectric strength of the semiconductor device from being limited depending on the thickness of a dielectric layer and the thickness of a first semiconductor layer. A semiconductor substrate () and an ntype semiconductor layer () are bonded to each other through a buried oxide film layer (). A first porous oxide film area () is formed in the semiconductor substrate in a state contacting with the buried oxide film layer. A power device is formed on the ntype semiconductor layer. The first porous oxide film area is formed in an area including a location right under a first main electrode () and extending from the first main electrode side up to a range of more than 40% of a distance (L) between the first and second main electrodes ().

Dielectric isolation type semiconductor device and method for manufacturing the same

An electrochemical etching system has an etching bath for holding an n-type silicon substrate with a first surface of the substrate in contact with hydrofluoric acid, an electrode positioned in the hydrofluoric acid, a power source having a positive pole connected to the silicon substrate and a negative pole connected to the electrode, and an illumination unit having a light source for illumination of a second surface of the silicon substrate. The illumination unit illuminates the second surface of the silicon substrate with an illumination intensity of 10 m W/cm or more. A ratio of a maximum illumination to a minimum illumination of the second surface of the silicon substrate is 1.69:1 or less. With the etching system, pores and/or trenches of a certain size and shape can be formed in an entire area of the silicon substrate having a diameter of more than three inches.

Growing community of inventors

Tokyo, Japan

Shinichi Izuo