Sanken Electric Co., Ltd.

Shinichi Iwakami

Koji Otsuka

Osamu Machida

Ryohei Baba

A semiconductor device includes: a nitride group semiconductor functional layer including a second nitride group semiconductor region on a first nitride group semiconductor region where a two-dimensional carrier gas layer is made, the second nitride group semiconductor region functioning as a barrier layer; a first main electrode electrically connected to one end of the two-dimensional carrier gas layer; a second main electrode electrically connected to the other end of the two-dimensional carrier gas layer; and a metal oxide film placed between the first and second main electrodes, electrically connected to the first main electrode, the first main electrode extends over an upper surface of the metal oxide film.

Semiconductor device having metal oxide film

A nitride compound semiconductor device includes a semiconductor layer including a group III nitride compound semiconductor, source and drain electrodes provided on the semiconductor layer, an insulating film provided on the semiconductor layer between the source electrode and the drain electrode, an organic semiconductor layer in contact with the semiconductor layer at an opening provided for the insulating film, and a gate electrode provided on the organic conductive layer at the opening.

Nitride compound semiconductor device including organic semiconductor layer under gate electrode

A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.

Semiconductor device having nitride semiconductor layer

A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and provides a Schottky junction with the semiconductor layers is formed on a bottom surface and a side surface of the concave portion. An electrode that is made from metal and provides a low resistance contact with the semiconductor layers and is also in low resistance contact therewith is formed on the bottom surface and side surface of the concave portion. As a result, a semiconductor device is provided in which contact resistance between the electrodes and the semiconductor layers is reduced and high frequency characteristics are improved.

III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact

A compound semiconductor element is provided which electrically connects an electrodeformed on one main surfaceof a compound semiconductor regionwith a substrateto fix an electric potential of substrateat an electric potential of electrode, thereby preventing fluctuation in electric potential of substrateunder the changing operating condition of the device for stabilization in electric property of the device. Also, formed between compound semiconductor regionand substrateis an insulating layerfor blocking a leakage current which may flow longitudinally between one main surfaceof compound semiconductor regionand substrateso that sufficiently high withstand voltage property can be given between compound semiconductor regionand substrate. In addition, formed in compound semiconductor regionis a notchwhich extends in the thickness direction from main surfaceof compound semiconductor regionand reaches at least insulating layer, and an insulating protective layercovers a side surface of a conductive filmexposed to the notchto prevent occurrence of electric discharge between conductive filmand substratefor stable and high withstand voltage.

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Niiza, Japan

Shinichi Iwakami