Kabushiki Kaisha Toshiba

Anritsu Corporation

Fuji Electric Co., Ltd.

Toshiba Memory Corporation

Sony Corporation

Hitachi, Ltd.

Toshiba Tec Kabushiki Kaisha

Tokyo Electron Limited

Other

Nikon Corporation

Hitachi Metals, Ltd.

Hitachi Vlsi Engineering Corp.

Shinichi Ito

Kei Hayasaki

Katsuya Okumura

Kenji Kawano

Eishi Shiobara

Tomoyuki Takeishi

Soichi Inoue

Tatsuhiko Ema

Daisuke Kawamura

Riichiro Takahashi

Hirokazu Kato

Iwao Higashikawa

Satoshi Tanaka

Hiroaki Hazama

Hideaki Sakurai

Hideki Kanai

Takayuki Iwamatsu

Koji Hashimoto

Takashi Sato

Tsuyoshi Shibata

Kentaro Matsunaga

Akitoshi Kumagae

Seiji Morita

Masamitsu Itoh

Ikuo Yoneda

Rempei Nakata

Tatsuhiko Higashiki

Makoto Nakase

Nobuhide Yamada

Haruki Komano

Hiroshi Ikegami

Yukiko Kikuchi

Yoko Tomofuji

Haruo Okano

Takahiro Kitano

Hiroyuki Sato

Yasunobu Onishi

Tadahito Fujisawa

Toru Watanabe

Shingo Kanamitsu

Hirofumi Ono

Kyoko Izuha

Takashi Kamo

Koji Yamashita

Hideya Miyazaki

Ryoichi Suzuki

Toshiya Kotani

Nobuo Hayasaka

Yuichiro Yamazaki

Ryoichi Inanami

Yoshihiko Naruoka

Ryosuke Yamamoto

Tsunetoshi Arikado

Naruaki Hiramitsu

Hisao Shigekane

Yoshihisa Kawamura

Shimon Maeda

Toru Mikami

Jun Ono

Koutarou Sho

Ryuichi Saito

Katsuya Okamura

Akihiro Kojima

Hideshi Abe

Yutaka Okamoto

Kazuya Fukuhara

Natsuki Yokoyama

Go Inoue

Keiji Horioka

Tetsuro Nakasugi

Yoshio Homma

Masafumi Asano

Yusuke Mitsuya

Hiroko Nakamura

Shinichi Kobayashi

Yukio Asari

Ryo Goto

Shigehiro Hara

Isahiro Hasegawa

Fumio Komatsu

Kenji Chiba

Hiroshi Koizumi

Koichi Matsuno

Ichiro Mori

Yoshiharu Taniyama

Takuya Kono

Yusuke Kasahara

Kei Hattori

Kiyomi Koyama

Seiro Miyoshi

Kazuto Matsuki

Takashi Hirano

Ayako Kawanishi

Takehiro Kondoh

Ichiro Kyushima

Jiro Mizuno

Yoshitaka Kihara

Takeharu Motokawa

Toru Otani

Atsushi Tsurumune

A signal generation unit, a DA converter, variable attenuators, andthat attenuate an analog signal converted by the DA converter, a measurement unitthat detects a level of the signal attenuated by the variable attenuators, andand passed through one or more semiconductor components, and a control unitthat obtains a value of a step error, which is a correction value of an attenuation amount of the variable attenuators, andin each of a plurality of steps obtained by dividing a maximum value of the attenuation amount of the variable attenuators, andby a variation amount, which is a predetermined attenuation amount are included.

Signal generation apparatus, level correction value calculation system, and level correction value calculation method

A signal generation unit, a DA converter, variable attenuators, and, a measurement unitthat detects a level of the signal attenuated by the variable attenuators, andand passed through one or more semiconductor components, a switchthat switches between an Internal path through which the signal attenuated by the variable attenuator, andis transmitted to the measurement unitand an External path through which the signal attenuated by the variable attenuator, andis output from an output terminal, and a control unitthat obtains a correction value of an attenuation amount of the variable attenuators, andwith the Internal path and obtains a correction value of an attenuation amount of the variable attenuatorwith the External path.

A signal generation unit, a DA converter, variable attenuators, andthat attenuate the analog signal converted by the DA converter, a measurement unitthat detects a level of the signal attenuated by the variable attenuators, andand passed through one or more semiconductor components, and a control unitthat obtains a value of a step error, which is a correction value of an attenuation amount of the variable attenuators, andin each of a plurality of steps obtained by dividing a maximum value of the attenuation amount of the variable attenuators, andby a variation amount, which is a predetermined attenuation amount are included.

A signal analysis apparatus includes a frequency conversion unitthat includes a first local oscillatorwhich outputs a first local oscillation signal Sof a frequency f, a first mixerwhich generates a first spurious signal of a frequency f, a first BPFof a passed center frequency f, a second local oscillatorwhich outputs a second local oscillation signal Sof a frequency f, and a second BPFof a passed bandwidth W, and that performs frequency conversion of a measured signal Sof a frequency f(center frequency fc), in which the frequency fand the frequency fare shifted using a frequency shift amount &#x394;f that does not establish a relationship of &#x2212;W/2&#x2264;|f&#x2212;f&#xb1;f&#x2212;&#x394;f|&#x2212;f&#x2264;+W/2.

Signal analysis apparatus and signal analysis method

A pattern-forming method includes forming a first film above a material to be processed, processing the first film into a pattern to be formed in the material to be processed, providing a second film on the first film and the material to be processed, supplying a precursor containing at least one of a metal material or a semiconductor material to the second film, removing the first film, and processing the material to be processed using the second film impregnated with at least one of the metal material and the semiconductor material, as a mask.

Pattern-forming method

According to one embodiment, a substrate processing apparatus comprises a chamber for a substrate that has a target film thereon. The apparatus includes a first gas introducing unit to introduce a precursor gas into the chamber, a second gas introducing unit that introduces a etching gas for etching the target film into the chamber, and a controller configured to control the first gas introducing unit and the second gas introducing unit to cause the first gas and the second gas to be alternately introduced to the chamber.

Substrate processing apparatus, substrate processing method, and semiconductor device fabrication method

In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.

Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof

A pattern forming method includes forming a guide pattern on a substrate including first and second regions and applying a directed self-assembly material including a first and a second polymer portion to the substrate. The first region is irradiated with an energy beam. The substrate is subjected to a heating process after irradiation and the directed self-assembly material in the second region separates into a first polymer phase and a second polymer phase. The directed self-assembly material is removed from the first region after irradiation.

Pattern forming method

A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and first and second interconnections on a first surface of the stacked body. The first and second electrode layers have first and second end surfaces respectively in the first surface. The first interconnection is electrically connected to the first electrode layer through a first region of the first end surface; and the second interconnection is electrically connected to the second electrode layer through a second region of the second end surface. The first and second interconnections extend in a first direction on the first surface. The first and second regions are arranged in a second direction crossing the first direction with a crossing angle smaller than 90 degrees. The first region and the second region each have a boundary along the second direction.

Semiconductor memory device and method for manufacturing same

A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Pattern forming method and manufacturing method of semiconductor device

Provided are a noise floor level reduction device and a noise floor level reduction method capable of reducing a noise floor level. A transmission power measurement systemis installed before a signal measurement deviceincluding a noise floor level measurement unitthat measures a noise floor level, and a measurement unitthat subtracts the noise floor level from a level of a signal from a DUTto calculate a level of a signal after subtraction, and includes an LNAprovided between the DUTand the signal measurement devicefor amplifying the signal from the DUTand a termination resistorthat terminates an input of the LNAand the termination resistorterminates the input of the LNAin a case in which the noise floor level measurement unitmeasures the noise floor level.

Noise floor level reduction device and noise floor level reduction method

A template for imprinting in which a pattern is transferred onto a first substrate applied curable resin thereon, including a second substrate having a surface to be contacted with the curable resin, a concave portion provided on the surface and corresponding to a pattern to be transferred onto the first substrate, and at least one convex portion arranged in the concave portion to decrease volume of the concave portion.

Template and pattern forming method

An ink jet printer includes a transfer unit transferring a sheet of paper along a transfer path surface, a printer head ejecting ink towards the sheet of paper, and an air blowing unit blowing air towards ink ejected from the printer head. The sheet of paper may be a postal matter (e.g., letter, postcard, parcel) and the printer head may be used to print barcodes or the like on the sheet of paper for purposes of subsequent sorting and routing.

Ink jet printer

Growing community of inventors

Yokohama, Japan

Shinichi Ito