Subaru Corporation

Kabushiki Kaisha Toshiba

Advanced Mask Inspection Technology Inc.

Nec Corporation

Fuji Jukogyo Kabushiki Kaisha

Riken Corporation

Megaopto Co., Ltd.

Shinichi Imai

Sou Tamiya

Takatoshi Nishii

Yuichiro Yamazaki

Toru Tojo

Satoshi Wada

Hiromu Inoue

Makoto Kaneko

Yusaku Konno

Koji Miyazaki

Takashi Hagino

Yoshiharu Urata

Takehiko Nomura

Takayo Ogawa

Tomoyuki Katou

Yusuke Ilda

Mitsutoshi Watabiki

Masaki Yumoto

Front grill for an automobile

Front bumper for an automobile

Passenger car

To provide a gas analysis device comprising: a cell; a light source; and a detector, wherein two or more types of gaseous components contained in the gas are measurement targets, a mid-infrared light with a wavelength that is caused to match the absorption spectrum of the measurement target gaseous components is output from the light source, and concentrations of the gaseous components are obtained based on light intensity detected by the detector. The gas analysis device sets a cumulative measurement time for the mid-infrared lights with the wavelengths for respective ones of the measurement target gaseous components; and controls at least one of an output time of the light source and a detection time of the detector in accordance with the cumulative measurement times, thereby efficiently measuring the plurality of types of gaseous components contained in the gas by using the mid-infrared lights with the plurality of wavelengths.

Gas analysis device and gas analysis method

In accordance with an embodiment, a pattern inspection method includes: applying a light generated from a light source to the same region of a substrate in which an inspection target pattern is formed; guiding, imaging and then detecting a reflected light from the substrate, and acquiring a detection signal for each of a plurality of different wavelengths; and adding the detection signals of the different wavelengths in association with an incident position of an imaging surface to generate added image data including information on a wavelength and signal intensity, judging, by the added image data, whether the inspection target pattern has any defect, and when judging that the inspection target pattern has a defect, detecting the position of the defect in a direction perpendicular to the substrate.

Pattern inspection apparatus and pattern inspection method

A wavelength conversion light source apparatus includes a fundamental wave light source configured to emit a fundamental wave, a nonlinear crystal configured to convert a wavelength of the fundamental wave by being irradiated with the fundamental wave and making the fundamental wave pass therethrough, and a movement unit configured to place the nonlinear crystal thereon and continuously move the nonlinear crystal within a plane, where a phase matching condition is not violated, so that a passage path of the fundamental wave passing through the nonlinear crystal is changed.

Wavelength conversion light source apparatus and wavelength conversion method

An illumination beam irradiation apparatus for use in pattern inspection systems is disclosed, which is less in deterioration of optical components and in attenuation of illumination light. The illumination apparatus includes a light source which yields a fundamental wave, a beam-shaper unit which performs beam-shaping of the fundamental wave so that this wave has a prespecified shape, and a pattern generator unit which operates, upon receipt of the beam-shaped fundamental wave, to convert this incoming wave into illumination light with a shorter wavelength to thereby generate illumination light of a prespecified shape. The illuminator also includes an image relay unit for guiding the illumination light that was generated by the pattern generator to fall onto a workpiece under inspection, such as a photomask or else.

Beam irradiation apparatus with deep ultraviolet light emission device for lithographic pattern inspection system

A pattern inspection apparatus is disclosed, which includes a first laser light source for emission of first laser light having a first wavelength, a second laser light source for emission of second laser light having a second wavelength, and a deep ultraviolet (DUV) light source for emission of DUV light with a wavelength of less than or equal to 266 nm based on the first laser light and the second laser light. A first optical fiber is provided for connecting between the first laser light source and the DUV light source. A second optical fiber is for connection between the second laser light source and the DUV light source. The apparatus also includes a pattern inspection unit with the DUV light source being built therein, for inspecting a workpiece pattern being tested by using the DUV light as illumination light therefore.

Pattern inspection apparatus

A pattern inspection apparatus is disclosed, which includes a first laser light source for emission of first laser light having a first wavelength, a second laser light source for emission of second laser light having a second wavelength, and a deep ultraviolet (DUV) light source for emission of DUV light with a wavelength of less than or equal to 266 nm based on the first laser light and the second laser light. A first optical fiber is provided for connecting between the first laser light source and the DUV light source. A second optical fiber is for connection between the second laser light source and the DUV light source. The apparatus also includes a pattern inspection unit with the DUV light source being built therein, for inspecting a workpiece pattern being tested by using the DUV light as illumination light therefor.

A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.

Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask

Growing community of inventors

Tokyo, Japan

Shinichi Imai