National Institute of Advanced Industrial Science and Technology

Fujikoshi Machinery Corp.

Other

National Institute of Agrobiological Sciences

Shinichi Ikeda

Shiro Hara

Sommawan Khumpuang

Naoki Shirakawa

Yoshio Nakamura

Kazutaka Shibuya

Hiroshi Bando

Yoshio Otsuka

Takayuki Fuse

Haruo Sumizawa

Takanori Mikahara

Hitoshi Habuka

Daizo Ichikawa

Akihiro Goto

Takashi Okubo

Hiroshi Amano

Katsuhide Uchida

A wafer cleaner and a method therefor that efficiently cleans a wafer with a little amount of a cleaning liquid and efficiently performs a heating wet cleaning processing. The present invention includes a stage where a wafer is placed, a rotary driving unit that rotates the stage in a circumferential direction, a liquid discharge nozzle disposed facing the wafer placed on the stage and supplies a cleaning liquid on the wafer placed on the stage, and a control unit that causes the liquid discharge nozzle to supply a space between the wafer placed on the stage and the liquid discharge nozzle with a predetermined amount of the cleaning liquid to fill the space. The present invention also includes a lamp disposed on a position facing the wafer placed on the stage to heat at least an interface portion of the wafer and a cleaning liquid.

Wet processing apparatus

To provide a crystal orientation mark which can be formed easily and inexpensively, and which enables to perform high precision alignment and allows information other than crystal orientation to be included, even for a small diameter process substrate. A crystal orientation mark is drawn on the surface of the process substrate. The crystal orientation mark includes a marking region for crystal orientation detection, and a marking region for information. The marking region for crystal orientation detection is provided at two locations in an outer edge portion of the process substrate to be used for the alignment of the process substrate. The marking region for information is provided on a straight-line region connecting the marking regions for crystal orientation detection at the two locations, and includes a pattern for demonstrating predetermined information relating to the process substrate.

Process substrate with crystal orientation mark, method of detecting crystal orientation, and reading device of crystal orientation mark

Provide a converging mirror-based furnace for heating a target by way of reflecting from a reflecting mirror unit the light emitted from a light source and then irradiating a target with the reflected light, wherein said target-heating converging-light furnace is such that: the reflecting mirror unit comprises a primary reflecting mirror and secondary reflecting mirror; the light emitted from the light source is reflected sequentially by the primary reflecting mirror and secondary reflecting mirror and then irradiated onto the target; and the light reflected by the secondary reflecting mirror and irradiated onto the target surface is not perpendicular to the target surface. Based on the above, a system that uses converged infrared light to provide heating can be made smaller while keeping its heating performance intact, even when the system uses a revolving ellipsoid.

Converging mirror furnace

A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained.

Method of manufacturing semiconductor wafers

The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Wafer polishing apparatus

The present invention provides oxygen partial pressure control apparatuses that can control the partial pressure of oxygen in atmospheric gases in processing apparatuses or the like to within the range of 0.2 to 10atm, while maintaining low material and operational cost conditions. The present invention provides oxygen partial pressure control apparatuses in which air or pure oxygen is supplied to the inside of a heating furnace that can heat and maintain solid electrolytes at an operational temperature, wherein the heating furnace houses at least one oxygen pump comprising a solid electrolyte with a tubular structure and at least two oxygen sensors comprising a solid electrolyte with a tubular structure, wherein the at least one oxygen pump described above and the at least two oxygen sensors described above are placed in parallel such that the aforementioned air or pure oxygen serves as a purge gas that sweeps the surroundings of each solid electrolyte tube, and wherein they are connected such that a common process gas can flow through each solid electrolyte tube.

Oxygen partial pressure control apparatuses and methods of using solid electrolytes for oxygen partial pressure control

An apparatus for measuring electromagnetic characteristics includes a sample rod with a sample fixed to a lower part thereof, a helium refrigerator, in which the sample rod is inserted, having a main pipe that forms around the sample rod a space that is cooled by helium , a device for supplying helium to the helium refrigerator, an inner tube portion, into which the main pipe is inserted, that supports at an upper part thereof the refrigerator, an outer tube that cools an outer periphery of the inner tube with helium, a liquid helium container that supplies liquid helium to the outer tube, and a device for measuring the electromagnetic characteristics of the sample.

Apparatus for measuring electromagnetic characteristics

A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound and/or Ru metal. The mixture is sintered at a primary temperature of 900&deg; C. to 1300&deg; C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape that is again sintered, this time at a secondary temperature of 1000&deg; C. to 1500&deg; C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

Growing community of inventors

Tsukuba, Japan

Shinichi Ikeda