Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Shinichi Hosomi

Yuji Kawano

Takaki Sugino

Hirobumi Matsui

Yui Nakaoka

Shuichi Ueno

Takafumi Hara

Naoki Yasuda

Tatsuya Fukami

Motohisa Taguchi

Hideki Shimauchi

Yuichi Sakai

Yoshitatsu Kawama

Hiromoto Inoue

Ikuya Kawakita

Kaito Takeshima

A magnetic sensor capable of preventing degradation of magnetic measurement accuracy is obtained. The magnetic sensor includes a first sensor portion, a second sensor portion, and a connection portion. The first sensor portion extends in a first direction. The second sensor portion is disposed at an interval from the first sensor portion in a second direction orthogonal to the first direction. The first sensor portion includes a first end and a second end that are ends in the first direction. The second sensor portion includes a third end and a fourth end that are ends in the first direction. The connection portion connects the second end and the third end. The first sensor portion, the second sensor portion, and the connection portion are constituted of a multilayer body of a magnetic sensor element and a magnet. The magnet applies a bias magnetic field to the magnetic sensor element.

Magnetic sensor and method for manufacturing same

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Semiconductor sensor device and semiconductor sensor device manufacturing method

In order to achieve at least one of size reduction and high accuracy by maintaining the reliability of the thermal detection sensor in the thermal detection sensor in the flow state of the fluid to be detected, based on a heat transfer amount from the heating resistor element to the fluid to be detected by heat exchange between the fluid to be detected and the heating resistor element via the flattened film, the thermal type detection sensor for detecting a flow state of the fluid to be detected, and wherein a sidewall covering a sidewall of the heating resistor element and blocking physical contact between the heating resistor element and the flattened film is provided between the heating resistor element and the flattened film, and the sidewall suppresses fluctuation in electric resistance of the heating resistor element due to silicidation of the heating resistor element.

Thermal detection sensor

An infrared sensor includes a supporting body having supporting body metal wiring that allows infrared rays to pass through. The supporting body is provided so as to cover one portion of an infrared detecting portion in a different plane spatially separated from that of the infrared detecting portion. The supporting body metal wiring disposed in an interior of the supporting body is such that one portion of a cobalt iron film is oxidized by a plasma discharge being carried out in an oxygen atmosphere. According to this kind of structure, infrared rays pass through the supporting body, and are absorbed by the infrared detecting portion, because of which there is no need to provide an infrared absorption layer in an upper layer of the supporting body.

Thermal infrared detector and manufacturing method thereof

A pad electrode such that a conductive film is used as the pad electrode in a semiconductor device has an object of preventing Al corrosion and improving Au bonding wire durability. A semiconductor device according to the invention includes a conductive film of Al or having Al as a main component on which a signal processing circuit and a pad electrode portion are formed, a metal film formed on the conductive film, and a protective film formed on the metal film, wherein a metal film region in which atoms derived from the metal film are implanted is formed on a surface of the conductive film exposed by an opening formed in one portion of the protective film and the metal film, and adopted as the pad electrode.

Semiconductor device and manufacturing method thereof

A sensor device module comprises: a substrate having a sensor element covered with a protective film, an integrated circuit formed on the substrate, and a bonding pad part formed on the substrate; wherein the integrated circuit and the sensor element are connected at a contact part, and the sensor element and the contact part have a metal thin film layer which consists of first metal layers and second metal layers, an insulating film which is formed on the metal thin film layer and made from the same material as the protective film, and an exfoliation sacrifice layer which is formed on the insulating film and in contact with the protective film, further wherein an upper most film or a lower most film of the exfoliation sacrifice layer is made from the same material as an upper most film of the metal thin film layer.

Sensor device module

According to the present invention, a magnetoresistive sensor device, which can be manufactured at a high yield and a low cost, is excellent in magnetoresistance characteristics and is reliable can be provided. The magnetoresistive sensor device comprises a substrate, a signal processing circuit formed on the substrate, a flattening film for flattening the signal processing circuit, a silicon nitride film formed on the flattened signal processing circuit, and magnetoresistive sensor elements formed on the silicone nitride film, in which the flattening film is preferably a spin-on-glass (SOG) film.

Magnetoresistive sensor device

A magnetoresistive sensor device including a substrate, and a sensing portion and a signal processing circuit formed above the substrate with a resin film being disposed between the sensing portion and the signal processing circuit. The sensing portion detects changes in a magnetic field induced by a moving body, is located at a position for effectively detecting changes in a magnetic field induced by the moving body, and is constituted by a magnetoresistive sensor element.

Growing community of inventors

Tokyo, Japan

Shinichi Hosomi