Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Mirise Technologies Corporation

Hamamatsu-Photonics K.k.

Tokai National Higher Education and Research System

Shinichi Hoshi

Masatake Nagaya

Daisuke Kawaguchi

Keisuke Hara

Hiroaki Fujibayashi

Chiaki Sasaoka

Junji Ohara

Yoshitaka Nagasato

Takashi Kanemura

Takashi Ushijima

Kozo Kato

A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate having a device structure formed thereon. In the laser irradiation step, a laser is irradiated from a second main surface of the semiconductor substrate to a plane surface that is positioned and extends at a predetermined depth of the semiconductor substrate. In the peeling step, a device layer is peeled off from the semiconductor substrate along the plane surface on which the laser is irradiated. The peeling step may be performed in a state in which the trenches are either unfilled or filled with a material having a lower coefficient of thermal expansion than the semiconductor substrate.

Manufacturing method of semiconductor device

A semiconductor device includes a semiconductor substrate including a semiconductor element, a first surface-side electrode disposed on a first surface of the semiconductor substrate, and a second surface-side electrode disposed on a second surface of the semiconductor substrate. The semiconductor substrate includes a gallium nitride substrate and first column regions and second column regions disposed on a first principal surface of the gallium nitride substrate and alternately arranged along a c-axis direction in the first principal surface. The first column regions are formed of a first nitride semiconductor layer and the second column regions are formed of a second nitride semiconductor layer that is higher in band gap than the first nitride semiconductor layer. The semiconductor element is configured to enable a current to flow between the first surface and the second surface of the semiconductor substrate.

Semiconductor device and manufacturing method of the same

A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

Semiconductor chip and method for manufacturing the same

A silicon carbide wafer includes a base wafer that is made of silicon carbide and doped with an n-type impurity, and an epitaxial layer that is arranged on a main surface of the base wafer, made of silicon carbide and doped with an n-type impurity. The base wafer has a thickness t1 and an average impurity concentration n1, and the epitaxial layer has a thickness t2 and an average impurity concentration n2. The base wafer and the epitaxial layer are configured so as to satisfy a mathematical formula 1:−0.0178<0.012+(2/1)×0.057−(2/1)×0.029−{(2/1)−0.273}×{(2/1)−0.685}×0.108<0.0178.  [Formula 1]

Silicon carbide wafer and method for manufacturing the same

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Nisshin, Japan

Shinichi Hoshi