Tokyo Ohka Kogyo Co., Ltd.

Shinichi Hidesaka

Yusuke Nakagawa

Toshimasa Nakayama

Hidekatsu Kohara

Akiya Kawaue

Makiko Irie

Yohei Kinoshita

Atsushi Sawano

Waki Ohkubo

Natsuko Maruyama

Hideo Hada

Yoshiyuki Utsumi

Tsuyoshi Nakamura

Takeshi Iwai

Hiroaki Shimizu

Kenji Maruyama

Takehiro Seshimo

Kousuke Doi

Kazuyuki Nitta

Tsuyoshi Kurosawa

Yoichi Hori

Kensuke Matsuzawa

Satoshi Shimatani

Taku Nakao

Masahiro Masujima

Hisanobu Harada

Hayato Ohno

Kazuhiko Nakayama

Takeaki Shiroki

A resist pattern formation method including formation of a resist film, exposure, development, and subsequent rinsing using a resist composition containing a high-molecular compound having a constituent unit represented by the formula (a0-1), a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and a constituent unit containing a group represented by the formula (a2-r-1). R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Rarepresents a lactone-containing polycyclic group, an &#x2014;SO-containing polycyclic group, or a cyano group-containing polycyclic group; Ra'represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, &#x2014;COOR&#x2033;, &#x2014;OC(&#x2550;O)R&#x2033;, a hydroxyalkyl group, or a cyano group; R&#x2033; represents a hydrogen atom or an alkyl group; and n&#x2032; represents an integer of from 0 to 2. 

Resist pattern formation method and resist composition

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety represented by general formula (I) (in the formula, Rrepresents a hydrogen atom or an organic group of 1 to 30 carbon atoms which may have a substituent; and Qrepresents a single bond or a divalent linking group). 

Resist composition, method of forming resist pattern, novel compound and acid generator

A compound represented by formula (I); and a compound represented by formula (b1-1): wherein X represents &#x2014;O&#x2014;, &#x2014;S&#x2014;, &#x2014;O&#x2014;R&#x2014; or &#x2014;S&#x2014;R&#x2014;, wherein each of Rand Rindependently represents an alkylene group of 1 to 5 carbon atoms; Rrepresents an alkyl group of 1 to 6 carbon atoms, an alkoxy group of 1 to 6 carbon atoms, a halogenated alkyl group of 1 to 6 carbon atoms, a halogen atom, a hydroxyalkyl group of 1 to 6 carbon atoms, a hydroxyl group or a cyano group; a represents an integer of 0 to 2; Qrepresents an alkylene group of 1 to 12 carbon atoms or a single bond; Yrepresents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group; Mrepresents an alkali metal ion; and Arepresents an organic cation.

Resist composition, method of forming resist pattern, novel compound and method of producing the same, and acid generator

A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained. The resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid, an acid-generator component (B) which generates acid upon irradiation and an organic solvent (S) in which the components (A) and (B) are dissolved, the resin component (A) including a copolymer (A1) containing: a structural unit (a1) having an acetal-type protected group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, which is represented by general formula (a2-1) shown below; and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group or a fluorinated lower alkyl group; R' represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and m represents 0 or 1.

Positive resist composition and method for forming resist pattern

The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, Rrepresents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; Rto Reach represents, independently, an aryl group or the alkyl group that may have substituent group; n' represents either 0 or an integer from 1 to 3].

Positive resist composition and resist pattern forming method

A resist composition is obtained by dissolving a resin component (A) that exhibits changed alkali solubility under the action of acid, an oxime sulfonate-based acid generator (B), an amine compound (D) containing at least one alkyl group of 5 to 12 carbon atoms, and an organic acid (E), in an organic solvent (C) containing methyl n-amyl ketone, wherein the component (E) is a dibasic acid.

Resist composition and method for forming resist pattern

To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.

Chemical amplified positive photo resist composition and method for forming resist pattern

Positive photoresist composition

A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.

A positive photoresist coating solution comprising (a) an alkali-soluble resin, (b) a quinone diazide group-containing compound, and (c) an organic solvent in an amount sufficient for dissolving said (a) and (b) components, wherein said organic solvent contains (i) propylene glycol monopropyl ether and (ii) 2-heptanone. The solution of the present invention exhibits excellent coating ability, sensitivity, thermostability, focal depth range, shape-profiling ability, and the like.

Positive photoresist coating solution comprising a mixed solvent of

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Kawasaki, Japan

Shinichi Hidesaka