Samsung Electronics Co., Ltd.

Shinichi Hasatomi

In-yong Song

Myung-kook Ahn

Sang-don Lee

An image transfer member, an image transfer device and an image forming system employing the image transfer member and device are disclosed. The image transfer member comprises a base layer, and a surface layer formed from a semi-conductive material above the base layer to receive the developer image transferred from the photoconductor. The surface layer forms a contact inscribed angle &#x3b8; in the range of 10&#xb0; to 50&#xb0; between the surface thereof and the developer image. The image transfer member has a voltage-current characteristic exhibiting a current density (CD) in the range of 0.6 &#x3bc;A/cm&#x2266;CD&#x2266;1.5 &#x3bc;A/cmat 1 KV voltage, and a voltage decay characteristic exhibiting a voltage decay time (DT) in the range of 0.4 sec&#x2266;DT&#x2266;3 sec for the voltage decay from 500 V to 100 V. The present invention avoids a transfer defect such as transfer void produced by breakdown caused when a high bias voltage is applied to a developer image having a high electric charge and to significantly improve the transfer efficiency.

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Suwon-si, South Korea

Shinichi Hasatomi