Nitta Haas Inc.

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Shinichi Haba

Masashi Teramoto

Noriaki Sugita

Tatsuya Nakauchi

Akiko Miyamoto

Lee Melbourne Cook

Hiroyuki Nakano

Naresh Kumar Penta

Takayuki Matsushita

Koichi Yoshida

Yasuyuki Itai

Yoshiharu Ota

Naoko Kawai

Sakiko Nakashima

Tomoyuki Toda

Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

Polishing composition

Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.

Method for polishing semiconductor substrate

Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Chemical mechanical polishing composition for polishing silicon wafers and related methods

Growing community of inventors

Kyoto, Japan

Shinichi Haba