Hamamatsu-photonics K.k.

Kyoto University

Shinichi Furuta

Susumu Noda

Tadataka Edamura

Yoshitaka Kurosaka

Kazuyoshi Hirose

Takahiro Sugiyama

Kazuue Fujita

Naota Akikusa

Atsushi Sugiyama

Akiyoshi Watanabe

Takahide Ochiai

Kousuke Shibata

A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layerobtained by periodically forming a plurality of holes H in a basic layerA comprised of a first compound semiconductor of the zinc blend structure and growing embedded regionsB comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layerto supply light to the photonic crystal layer, in which a principal surface of the basic layerA is a (001) plane and in which side faces of each hole H have at least three different {100} facets.

Semiconductor surface light-emitting element and method of manufacturing thereof

A DFB quantum cascade laser element that can reliably CW-oscillate a single-mode light even at room temperature or a temperature in proximity thereof is provided. In a quantum cascade laser element, a top-grating approach for which a diffraction gratingis formed on a laminateis adopted, and thus in comparison with a buried-grating approach, deterioration in temperature characteristics of the laser element and decline in the yield and reproducibility are suppressed. In addition, since the thickness of a cladding layerlocated between an active layerand the diffraction gratingis within a range of 42&#xb1;10% of the oscillation wavelength, weakening of light seeping from the active layerto the diffraction gratingor an increase in light leakage is prevented. Consequently, by the quantum cascade laser element, a single-mode light can be reliably CW-oscillated even at room temperature or a temperature in proximity thereof.

Quantum cascade laser element

Growing community of inventors

Hamamatsu, Japan

Shinichi Furuta