Mitsubishi Materials Corporation

Shinichi Funaki

Kazunari Maki

Naoki Miyashima

Hiroyuki Mori

Kenji Morikawa

Kiyotaka Nakaya

Hirotaka Matsunaga

Kosei Fukuoka

Yuki Inoue

Yuki Ito

Kenji Kubota

Takashi Tamagawa

Yoshiteru Akisaka

Fuyumi Mawatari

Seiichi Ishikawa

Takanori Kobayashi

Kazuaki Sakai

Shinya Koike

Sei Okuda

This copper alloy contains 10-100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise; 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50. The electrical conductivity is 97% IACS or greater. The half-softening temperature is 200° C. or higher. The residual stress ratio RSat 180° C. for 30 hours is 20% or greater. The ratio RS/RSat 180° C. for 30 hours is greater than 1.0.

Copper alloy, plastically worked copper alloy material, component for electronic/electrical equipment, terminal, heat dissipation substrate

A Cu—Ni—Si based copper alloy containing Ni and Si: in a center portion in a plate thickness direction, containing 0.4% by mass or more and 5.0% by mass or less of Ni, 0.05% by mass or more and 1.5% by mass or less of Si, and the balance Cu and inevitable impurities; where an Ni concentration on a plate surface is 70% or less of a center Ni concentration in the thickness center portion; a surface layer portion having a depth from the plate surface to be 90% of the center Ni concentration; in the surface layer portion, the Ni concentration increases from the plate surface toward the thickness center portion at 5.0% by mass/μm or more and 100% by mass/μm or less of a concentration gradient; to improve the electric connection reliability under high-temperature environment.

Cu—Ni—Si based copper alloy plate, Cu—Ni—Si based copper alloy plate with plating film, and methods of producing the same

This copper alloy contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise: 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater. The half-softening temperature ratio T/Tis greater than 0.95 and less than 1.08. The half-softening temperature Tis 210° C. or higher.

Copper alloy, copper alloy plastic working material, component for electronic/electrical device, terminal, bus bar, lead frame, and heat dissipation substrate

A copper alloy plate containing in a center part of a plate thickness direction more than 2.0% (% by mass) and 32.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.1% of Fe, and 0.005% or more and 0.1% or less of P; and the balance Cu, including a surface layer part in which a surface Zn concentration in a surface is 60% or less of a center Zn concentration in the center part, having a depth from the surface to where Zn concentration is 90% of the center Zn concentration; and in the surface layer, the Zn concentration increases from the surface toward the center part in the plate thickness direction at a concentration gradient of 10% by mass/μm or more and 1000% by mass/μm or less.

Copper alloy plate, copper alloy plate with plating film, and methods for producing these

Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/μm or more and 5 mass %/μm or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

Copper alloy sheet, copper alloy sheet with plating film, and method for producing same

A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.

Terminal material for connector

To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/&#x3bc;m or more and 50% by mass/&#x3bc;m or less.

Copper alloy plate, copper alloy plate with plating film, and manufacturing method thereof

A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/&#x3bc;m or more and 50 mass %/&#x3bc;m or less.

Copper alloy plate, plating film-attached copper alloy plate, and methods respectively for manufacturing these products

A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 &#x3bc;m to 1.2 &#x3bc;m inclusive; the copper-tin alloy layer is a compound alloy layer in which CuSnis a main ingredient and part of copper in the CuSnis substituted with nickel, and an average crystal grain size is 0.2 &#x3bc;m to 1.5 &#x3bc;m inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 &#x3bc;m to 1000 &#x3bc;m inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

Tin-plated copper terminal material and method of manufacturing the same

A terminal material for connectors, which is obtained by sequentially laminating on a substrate that is formed of copper or a copper alloy, a nickel or nickel alloy layer, a copper-tin alloy layer and a tin layer in this order, and: the tin layer has an average thickness of from 0.2 &#x3bc;m to 1.2 &#x3bc;m (inclusive); the copper-tin alloy layer is a compound alloy layer that is mainly composed of CuSn, with some of the copper in the CuSnbeing substituted by nickel, and has an average crystal grain diameter of from 0.2 &#x3bc;m to 1.5 &#x3bc;m (inclusive); a part of the copper-tin alloy layer is exposed from the surface of the tin layer, with the exposure area ratio being from 1% to 60% (inclusive); the nickel or nickel alloy layer has an average thickness of from 0.05 &#x3bc;m to 1.0 &#x3bc;m (inclusive) and an average crystal grain diameter of from 0.01 &#x3bc;m to 0.5 &#x3bc;m (inclusive).

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Aizuwakamatsu, Japan

Shinichi Funaki