Fujitsu Semiconductor Limited

Shinkawa Ltd.

Konica Minolta, Inc.

Transphorm Japan, Inc.

Fujitsu Corporation

Shinichi Akiyama

Kazuo Kawamura

Kazuya Okubo

Hirofumi Watatani

Tamotsu Owada

Hisaya Sakai

Nobuyuki Ohtsuka

Toshiya Sato

Shinsuke Tei

Yoshitaka Watanabe

Hiroaki Yoshino

Kenji Nukui

Tsutomu Hosoda

Satoshi Takesako

Yuuichi Satou

Mutsumi Katou

Tetsuya Itou

Yoichi Fujisawa

Tomohiro Takizawa

Kazuhiro Arima

Naoki Sekine

Youichi Momiyama

Motoki Nakazawa

Hiroto Motoyama

Yusuke Morisaki

Masanori Uchida

Takahiro Kono

Yoshiyuki Katani

Takahiro Kouno

There is a need to prevent the amount of information about read images from increasing excessively, improve the productivity, and reduce the storage capacity to store read images. There is provided a level setter that sets a level of accuracy for an image inspection process. An inspection image data generator generates inspection image data by using a resolution or a gradation setting corresponding to a level set by the level setter. A comparison image data generator generates comparison image data by using a resolution or a gradation setting corresponding to a level set by the level setter. Lowering a level set by the level setter decreases the amount of the inspection image data and the comparison image data.

Image forming system, image forming apparatus, and program

Upon capture of video data for a match of a sport at a first time, an apparatus performs detection of event information from the captured video data during a first time-period starting from the first time, where the event information includes information identifying an occurrence timing of an event that occurs in the match of the sport, an event type of the event, and an occurrence position of the event. The apparatus reproduces the video data, on a display screen, with a delay by a second time-period obtained by adding a third time-period longer than or equal to a predetermined time-period to the first time-period, and, upon detection of the event information, continues displaying the event type and the occurrence position of the event, for the predetermined time-period, from a timing that is the predetermined time before the occurrence timing of the event within the reproduced video data.

Apparatus and method to display event information detected from video data

The roll printing device includes a hardware processor configured to, on receiving a succeeding job during printing of a preceding job on a roll of print media, use a printing area for printing copies of an object of the preceding job and the width of the print media, to determine a blank area or areas to be created on the print media, and judge whether to print the succeeding job together with the preceding job with copies of the object of the succeeding job being arranged in the blank area or areas. The hardware processor is further configured to, according to the judgment result, define the layout of the copies of the object of the succeeding job in the blank area or areas, and change image data currently used for printing, at a certain time during the printing of the preceding job.

Roll printing device, non-transitory recording medium storing program for controlling printing on roll of print media, and method for the same

Provided is a wire-bonding apparatus () including: a capillary () through which a wire () is inserted; a nonsticking determination circuit () configured to apply a predetermined electrical signal between a bonding target and the wire () in a clamped state and to determine whether or not the wire () and the bonding target is sticking as well as whether or not the wire () is disconnected based on a response of the application of the predetermined electrical signal; an annular projecting length detection ring () disposed coaxially with the capillary (); and a projecting length determination circuit () configured to determine whether or not a projecting length of a wire tail projecting from the tip of the capillary () is appropriate based on detection on whether or not power is conductive when a predetermined inspection voltage is applied between the wire () and the projecting length detection ring () as well as a presence of a discharge spark when a predetermined inspection high voltage is applied between the wire () and the projecting length detection ring ().

Wire-bonding apparatus and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device includes forming an electron transit layer on a semiconductor substrate, forming an electron supply layer on the electron transit layer, forming a cap layer on the electron supply layer, forming a protection layer on the cap layer, the protection layer having an opening part, through which a part of the cap layer is exposed, and forming an oxidation film on an exposed surface of the cap layer by a wet process.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor.

A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Compound semiconductor device and method of manufacturing same

A method for manufacturing a semiconductor device includes forming a first-conductivity-type well and a second-conductivity-type well in a silicon substrate; stacking a first high-dielectric-constant insulating film and a first cap dielectric film above the silicon substrate; removing at least the first cap dielectric film from above the second-conductivity-type well; conducting a first annealing at a first temperature to cause an element included in the first cap dielectric film to diffuse into the first high-dielectric-constant insulating film disposed above the first-conductivity-type well; after the first annealing, stacking a second high-dielectric-constant insulating film and a second cap dielectric film above the silicon substrate; removing the second cap dielectric film disposed above the first-conductivity-type well; and conducting a second annealing at a second temperature lower than the first temperature to cause an element included in the second cap dielectric film to diffuse into the second high-dielectric-constant insulating film disposed above the second-conductivity-type well.

Method for manufacturing semiconductor device

The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer, making a first thermal processing to react the nickel platinum film with the source/drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71&#xb0; C. or more containing hydrogen peroxide.

Method of manufacturing semiconductor device

Method of manufacturing compound semiconductor device with gate electrode forming before source electrode and drain electrode

A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.

Method of manufacturing a semiconductor device and semiconductor device

A terminal of a compact wire loop with a great strength of bonding is formed by a method including: a first folding step in which a tip end of a capillary is raised by a height of Hfrom a pointwhere the center of the capillary is positioned during second bonding on a leadto a point 'p', and then moved horizontally by a first distance of Ltoward a pad, and lowered to a point 'r'; a second folding step in which the tip end of the capillary is raised from the point &#x201c;r&#x201d; to a height of Hand then moved horizontally toward the leadby a second distance of L; and a third bonding step in which the center of the capillary is aligned with and then lowered to a pointon the leadadjacent to the point

Method of manufacturing semiconductor device and wire bonding apparatus

Growing community of inventors

Kawasaki, Japan

Shinichi Akiyama