Sony Corporation

Shinichi Agatsuma

Hiroaki Abe

Nozomu Hoshi

Hisashi Kudo

Mari Chiba

Youichi Suzuki

Shiro Uchida

A semiconductor light emitting device includes a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate. An upper section of a ridge groove is formed by an anisotropic etching process, as a first groove in such a way as to have a depth from a surface of the multi-layered semiconductor layer and as not to cross the etching stop layer at the depth. A bottom groove of the ridge groove is formed by an isotropic etching process, as a second groove by performing etching in such a way as to be stopped by the etching stop layer.

Method of manufacturing semiconductor light emitting device

A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer being formed into the stripe ridge structure, wherein the upper cladding layer forming the foot and slope of said stripe ridge structure is covered with a buried layer of layered structure made up of two or more low refractive index layers to prevent absorption of the laser light, with a light-absorbing layer interposed between them which absorbs the laser light of oscillatory wavelength. This semiconductor laser prevents kinks due to higher-order modes, and hence it realizes a high level of output.

Semiconductor laser

A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate; a process of forming a ridge groove for forming a ridge; and a process of forming a current-flow barrier layer in the ridge groove. The process of forming ridge grooves has first and second anisotropic etching processes of performing anisotropic etching, an etching-mask forming process, and an isotropic etching process of performing anisotropic etching.

AlGaInP system laser device () and AlGaAs system laser device () are arranged so that respective stripes () are parallel to each other. The AlGaInP system laser device () is placed to (011) plane () side from the centerline of the substrate and the AlGaAs system laser device () is placed to the (0{overscore (1)}{overscore (1)}) plane () side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) () side of laser light. Substrate () is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane () toward the (011) plane () with respect to the (100) plane at a certain angle (&#x3b8; off) within the range of 2 degrees and 15 degrees. Optical axis Lof the AlGaInP system laser device () is parallel to optical axis Lof the AlGaAs system laser device () and approaches at an angle of about 0.5 degrees.

Growing community of inventors

Miyagi, Japan

Shinichi Agatsuma