Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Shinhyuk Yang

Jeehoon Kim

Jongmoo Huh

Yujin Kim

Kyumin Kim

Donghan Kang

Doohyun Kim

Taeyoung Kim

Dongwon Kim

Sunghwan Won

Kwangsoo Lee

Eunhyun Kim

Hyehyang Park

Beomsoo Kim

Youngjin Yoon

Huiwon Yang

Soonwook Hong

Hyeonsu Cho

Eunwon Lee

Hanhee Yoon

Songhee Kim

Inyoung Jung

An etchant including: persulfate; a fluorine-containing compound; a chlorine-containing compound; a cyclic amine compound; an inorganic acid; sulfate; and water, wherein a tip control index (Y) of the etchant is a value of at least about 45.0 and not more than about 70.0, the tip control index (Y) being a value calculated by Equation 1:=1.0×10(1)+1.0×10(2)+5.0×10(3)+1.5×(1)×(2)+2.0×10(1)×(3)+2.0×10(2)×(3)  Equation 1The description of Equation 1 is as in the specification.

Etchant

A display apparatus includes: a substrate including a display area, and a peripheral area; and a pad unit at the peripheral area, the pad unit including: a first conductive layer; a second conductive layer on the first conductive layer, and having a first opening; a third conductive layer on the second conductive layer, and having a second opening overlapping with the first opening, the second opening having an area less than an area of the first opening at a top surface of the second conductive layer; an organic protective layer filling the first opening, and having a third opening overlapping with the second opening; and an additional metal layer covering a top surface of the first conductive layer exposed through the first opening, an inner surface of the second opening, an inner surface of the third opening, and a portion of a top surface of the third conductive layer.

Display apparatus including pad unit having plurality of conductive layers with multiple openings

A display device includes a driving element disposed in a display area, an emission element disposed in the display area and electrically connected to the driving element, and a connection pad disposed in a pad area adjacent to the display area and electrically connected to the driving element. The connection pad includes a first pad conductive layer including a metal and a second pad conductive layer including indium tin zinc oxide (ITZO). The indium tin zinc oxide of the second pad conductive layer includes about 20 at % to about 35 at % of indium (In), about 2 at % to about 20 at % of zinc (Zn), about 4 at % to about 6 at % of tin (Sn), and a remainder of oxygen (O).

Display device

A display apparatus includes a display area including pixels on a substrate, a pad portion on the substrate in a non-display area outside the display area, and including a conductive line, a first dummy line around the conductive line, and a first anti-fuse and a second anti-fuse adjacent to the conductive line and spaced apart from each other in a lengthwise direction of the conductive line, the first anti-fuse and the second anti-fuse each including a first electrode electrically connected to a portion of the conductive line, and a second electrode over the first electrode with a first insulating layer therebetween, and electrically connected to a portion of the first dummy line, and a circuit portion overlapping, and electrically connected to, the pad portion.

Display apparatus

A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

Display device including pad arranged in peripheral area

A thin film transistor substrate that includes a substrate, a lower gate electrode arranged on the substrate, a semiconductor layer arranged on the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region, and an upper gate electrode arranged on the substrate and overlapping the semiconductor layer, the upper gate electrode being arranged on an opposite side of the semiconductor layer than the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by an aperture to reduce a parasitic capacitance between the upper and lower gate electrodes.

Thin film transistor substrate and organic light-emitting display using the same

A display apparatus that can reduce defects caused by static electricity, includes a substrate unit that includes at least one organic insulating layer, at least one inorganic insulating layer, and a first conductive layer that includes doped amorphous silicon (a-Si) that is disposed between the at least one organic insulating layer and the at least one inorganic insulating layer; and a thin film transistor unit disposed on the substrate portion and that includes a thin film transistor.

A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.

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Yongin-si, South Korea

Shinhyuk Yang